| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI7858BDP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 40A 8SOIC | 0 | 3,000:$0.67200 6,000:$0.63840 15,000:$0.61200 30,000:$0.59520 75,000:$0.57600 |
| SI4136DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 8-SOIC | 2,090 | 1:$1.79000 25:$1.41000 100:$1.26900 250:$1.10452 500:$0.98700 1,000:$0.77550 |
| SI4136DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 8-SOIC | 2,090 | 1:$1.79000 25:$1.41000 100:$1.26900 250:$1.10452 500:$0.98700 1,000:$0.77550 |
| SI4136DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 8-SOIC | 0 | 2,500:$0.65800 5,000:$0.62510 12,500:$0.59925 25,000:$0.58280 |
| SI7615DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1212-8 | 2,750 | 1:$1.79000 25:$1.41000 100:$1.26900 250:$1.10452 500:$0.98700 1,000:$0.77550 |
| SI7615DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1212-8 | 2,750 | 1:$1.79000 25:$1.41000 100:$1.26900 250:$1.10452 500:$0.98700 1,000:$0.77550 |
| SI7615DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1212-8 | 0 | 3,000:$0.65800 6,000:$0.62510 15,000:$0.59925 30,000:$0.58280 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 12V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 40A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 2.5 毫歐 @ 15A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 84nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 5760pF @ 6V |
| 功率 - 最大: | 48W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SO-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? SO-8 |
| 包裝: | 帶卷 (TR) |