| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI4136DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 8-SOIC | 2,090 | 1:$1.79000 25:$1.41000 100:$1.26900 250:$1.10452 500:$0.98700 1,000:$0.77550 |
| SI4136DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 8-SOIC | 2,090 | 1:$1.79000 25:$1.41000 100:$1.26900 250:$1.10452 500:$0.98700 1,000:$0.77550 |
| SI4136DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 8-SOIC | 0 | 2,500:$0.65800 5,000:$0.62510 12,500:$0.59925 25,000:$0.58280 |
| SI7615DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1212-8 | 2,750 | 1:$1.79000 25:$1.41000 100:$1.26900 250:$1.10452 500:$0.98700 1,000:$0.77550 |
| SI7615DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1212-8 | 2,750 | 1:$1.79000 25:$1.41000 100:$1.26900 250:$1.10452 500:$0.98700 1,000:$0.77550 |
| SI7615DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1212-8 | 0 | 3,000:$0.65800 6,000:$0.62510 15,000:$0.59925 30,000:$0.58280 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 46A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 2 毫歐 @ 15A，10V |
| Id 時的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 110nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 4560pF @ 10V |
| 功率 - 最大: | 7.8W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | Digi-Reel® |