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參數(shù)資料
| 型號(hào)： | DT2955 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 2.5 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | DT2955 |
D
S
11610 Rev. C-4
4 of 4
DT2955
0.01
0.1
1
10
20
0.1
1.0
10
100
-
D
-V
Fig. 5, Maximum Safe Operating Area
, DRAIN-SOURCE VOLTAGE (V)
R
LMT
DS(ON)
100 s
1ms
10ms
100ms
1s
10s
dc
V
= -10V
SINGLE PULSE
R
= 42 C
T = 25 C
qJA
0.001
0.01
0.1
1.0
0.0001
0.001
0.01
0.1
1.0
10
100
r
T
t , SQUARE WAVE PULSE DURATION (seconds)
Fig. 6, Typical Normalized Transient Thermal Impedance Curves
1000
3000
Single Pulse
0.01
0.05
0.1
0.2
0.02
D = 0.5
t
1
t
2
P
(pk)
T - T = P
Duty Cycle, D = t /t
b R
(t)
PK
QJA
1 2
R
R
(t) = r(t) b R
= See Note 1c
QJA
QJA
QJA
Remark: Thermal characterization performed under conditions
described in note 1c. Transient thermal response will change
depending on the circuit board design.
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