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參數(shù)資料
| 型號： | DT2955 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 2.5 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 74K |
| 代理商： | DT2955 |
D
S
11610 Rev. C-4
2 of 4
DT2955
Electrical Characteristics
25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
-60
—
—
-10
-100
100
-100
V
V
GS
= 0V, I
D
= -250μA
T
j
= 125°C
I
DSS
—
—
μA
V
DS
= -60V, V
GS
= 0V
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
GSSF
I
GSSR
—
—
—
—
nA
nA
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
T
j
= 125°C
V
GS(th)
-2.0
-0.8
-2.4
-2.0
0.21
0.3
0.36
-4.0
-2.6
0.30
0.45
0.50
V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
T
j
= 125°C
R
DS (ON)
—
V
GS
= -10V, I
D
= -2.5A
V
GS
= -10V, I
D
= -2.5A
V
GS
= -4.5V, I
D
= -2.0A
V
GS
= -10V, V
DS
= -5.0V
V
DS
= -10V, I
D
= -2.5A
On-State Drain Current
Forward Transconductance
DYNAMIC CHACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
I
D(ON)
g
FS
-12
—
—
3.5
—
—
A
m
C
iss
C
oss
C
rss
—
—
—
570
140
40
—
—
—
pF
pF
pF
V
= -25V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
—
—
—
—
—
—
—
8.0
20
20
5.0
16
2.0
4.0
15
40
40
20
25
5.0
8.0
ns
ns
ns
ns
nC
nC
nC
V
DD
= -30V, I
= -1.0A
V
GEN
= -10V, R
GEN
= 6.0
V
DS
= -30V. I
D
= -2.5A.
V
GS
= -10V
I
S
—
—
-2.3
A
V
SD
—
—
-1.3
V
V
GS
= 0V, I
S
= -2.5A (Note 2)
Notes:
2. Pulse Test: Pulse width
l
300μs, duty cycle
l
2.0%.
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