- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377008 > DT28F800F3B120 (INTEL CORP) FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT PDF資料下載
參數(shù)資料
| 型號： | DT28F800F3B120 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| 中文描述： | 512K X 16 FLASH 2.7V PROM, 120 ns, PDSO56 |
| 封裝： | 16 X 23.70 MM, SSOP-56 |
| 文件頁數(shù)： | 41/47頁 |
| 文件大小： | 277K |
| 代理商： | DT28F800F3B120 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁當前第41頁第42頁第43頁第44頁第45頁第46頁第47頁
E
8.8
FAST BOOT BLOCK DATASHEET
41
PRODUCT PREVIEW
Extended Temperature Block Erase And Program Performance
(3, 4, 5)
2.7 V V
PP
12 V V
PP
#
Sym
t
WHRH1
, Program Time
t
EHRH1
Block Program Time (Parameter)
Block Program Time (Main)
t
WHRH2
, Block Erase Time (Parameter)
t
EHRH2
Block Erase Time (Main)
t
WHRH5
,
t
EHRH5
t
WHRH6
,
t
EHRH6
Parameter
Notes
2
2
2
2
2
Typ
(1)
23.5
0.10
0.8
1
1.8
6
Max
200
0.30
2.4
4
5
10
Typ
(1)
8
0.03
0.24
0.8
1.1
5
Max
185
0.10
0.8
4
5
10
Unit
μs
sec
sec
sec
sec
μs
W19
Program Suspend Latency
Erase Suspend Time
13
20
10
12
μs
NOTES:
1.
2.
3.
4.
5.
Typical values measured at T
A
= +25 °C and nominal voltages. Subject to change based on device characterization.
Excludes system-level overhead.
These performance numbers are valid for all speed versions.
Sampled, but not 100% tested.
Reference the
AC Waveform for Write Operations
Figure 20.
8.9
Automotive Temperature Operating Conditions
Except for the specifications given in this section, all DC and AC characteristics are identical to those listed in
the extended temperature specifications. See Section 7.2 for extended temperature specifications.
Symbol
Parameter
Notes
Min
Max
Unit
T
A
Operating Temperature
-40
+125
°C
V
CC1
V
CC
Supply Voltage
1
3.0
3.6
V
V
CCQ1
I/O Voltage
1,2
3.0
3.6
V
V
PPH1
V
PP
Supply Voltage
1
3.0
3.6
V
V
PPH2
V
PP
Supply Voltage
1,3
11.4
12.6
V
Cycling
Parameter Block Erase Cycling
30,000
Cycles
Main Block Erase Cycling
1,000
Cycles
NOTES:
1.
2.
3.
See DC Characteristics tables for voltage range-specific specifications.
The voltage swing on the inputs, V
IN
is required to match V
CCQ
.
Applying V
= 11.4 V
–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on the main and
parameter blocks. A hard connection to V
PP
= 11.4 V–12.6 V is not allowed and can cause damage to the device.
相關PDF資料 |
PDF描述 |
|---|---|
| DT28F800F3B95 | FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| DT28F800F3T120 | FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| DT28F800F3T95 | FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| DT28F320S3-100 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| DT28F160S3-100 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DT28F800F3B95 | 制造商:Intel 功能描述: |
| DT28F800F3T120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| DT28F800F3T95 | 制造商:INTEL 功能描述:NEW 制造商:Intel 功能描述: |
| DT2955 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DT-2960/2962G | 制造商:Bud Industries Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。