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參數(shù)資料
| 型號： | DT28F160F3T95 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 95 ns, PDSO56 |
| 封裝： | 16 X 23.70 MM, SSOP-56 |
| 文件頁數(shù)： | 41/47頁 |
| 文件大?。?/td> | 277K |
| 代理商： | DT28F160F3T95 |
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E
8.8
FAST BOOT BLOCK DATASHEET
41
PRODUCT PREVIEW
Extended Temperature Block Erase And Program Performance
(3, 4, 5)
2.7 V V
PP
12 V V
PP
#
Sym
t
WHRH1
, Program Time
t
EHRH1
Block Program Time (Parameter)
Block Program Time (Main)
t
WHRH2
, Block Erase Time (Parameter)
t
EHRH2
Block Erase Time (Main)
t
WHRH5
,
t
EHRH5
t
WHRH6
,
t
EHRH6
Parameter
Notes
2
2
2
2
2
Typ
(1)
23.5
0.10
0.8
1
1.8
6
Max
200
0.30
2.4
4
5
10
Typ
(1)
8
0.03
0.24
0.8
1.1
5
Max
185
0.10
0.8
4
5
10
Unit
μs
sec
sec
sec
sec
μs
W19
Program Suspend Latency
Erase Suspend Time
13
20
10
12
μs
NOTES:
1.
2.
3.
4.
5.
Typical values measured at T
A
= +25 °C and nominal voltages. Subject to change based on device characterization.
Excludes system-level overhead.
These performance numbers are valid for all speed versions.
Sampled, but not 100% tested.
Reference the
AC Waveform for Write Operations
Figure 20.
8.9
Automotive Temperature Operating Conditions
Except for the specifications given in this section, all DC and AC characteristics are identical to those listed in
the extended temperature specifications. See Section 7.2 for extended temperature specifications.
Symbol
Parameter
Notes
Min
Max
Unit
T
A
Operating Temperature
-40
+125
°C
V
CC1
V
CC
Supply Voltage
1
3.0
3.6
V
V
CCQ1
I/O Voltage
1,2
3.0
3.6
V
V
PPH1
V
PP
Supply Voltage
1
3.0
3.6
V
V
PPH2
V
PP
Supply Voltage
1,3
11.4
12.6
V
Cycling
Parameter Block Erase Cycling
30,000
Cycles
Main Block Erase Cycling
1,000
Cycles
NOTES:
1.
2.
3.
See DC Characteristics tables for voltage range-specific specifications.
The voltage swing on the inputs, V
IN
is required to match V
CCQ
.
Applying V
= 11.4 V
–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on the main and
parameter blocks. A hard connection to V
PP
= 11.4 V–12.6 V is not allowed and can cause damage to the device.
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