參數(shù)資料
型號(hào): DSPIC30F2020-20E/MM
廠(chǎng)商: Microchip Technology
文件頁(yè)數(shù): 35/66頁(yè)
文件大?。?/td> 0K
描述: IC DSPIC MCU/DSP 12K 28QFN
產(chǎn)品培訓(xùn)模塊: Asynchronous Stimulus
特色產(chǎn)品: SMPS & Digital Power Conversion Solutions
標(biāo)準(zhǔn)包裝: 61
系列: dsPIC™ 30F
核心處理器: dsPIC
芯體尺寸: 16-位
速度: 20 MIPS
連通性: I²C,IrDA,LIN,SPI,UART/USART
外圍設(shè)備: 欠壓檢測(cè)/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 21
程序存儲(chǔ)器容量: 12KB(4K x 24)
程序存儲(chǔ)器類(lèi)型: 閃存
RAM 容量: 512 x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 28-VQFN 裸露焊盤(pán)
包裝: 管件
產(chǎn)品目錄頁(yè)面: 650 (CN2011-ZH PDF)
配用: DM300023-ND - KIT DEMO DSPICDEM SMPS BUCK
AC164322-ND - MODULE SOCKET MPLAB PM3 28/44QFN
DV164005-ND - KIT ICD2 SIMPLE SUIT W/USB CABLE
dsPIC30F Flash Programming Specification
DS70102K-page 40
2010 Microchip Technology Inc.
11.6
Erasing Program Memory in
Low-Voltage Systems
The procedure for erasing program memory (all code
memory and data memory) in low-voltage systems
(with VDD between 2.5 volts and 4.5 volts) is quite
different than the procedure for erasing program
memory in normal-voltage systems. Instead of using a
Bulk Erase operation, each region of memory must be
individually erased by row. Namely, all of the code
memory, executive memory and data memory must be
erased one row at a time. This procedure is detailed in
Due to security restrictions, the FBS, FSS and FGS
register cannot be erased in low-voltage systems.
Once any bits in the FGS register are programmed to
‘0’, they can only be set back to ‘1’ by performing a Bulk
Erase in a normal-voltage system. Alternatively, a Seg-
ment Erase operation can be performed instead of a
Bulk Erase.
Normal-voltage systems can also be used to erase
program memory as shown in Table 11-5. However,
since this method is more time-consuming and does
not clear the code-protect bits, it is not recommended.
Note:
Program memory must be erased before
writing any data to program memory.
TABLE 11-5:
SERIAL INSTRUCTION EXECUTION FOR ERASING PROGRAM MEMORY
(EITHER IN LOW-VOLTAGE OR NORMAL-VOLTAGE SYSTEMS)
Command
(Binary)
Data
(Hexadecimal)
Description
Step 1: Exit the Reset vector.
0000
040100
000000
GOTO 0x100
NOP
Step 2: Initialize NVMADR and NVMADRU to erase code memory and initialize W7 for row address updates.
0000
EB0300
883B16
883B26
200407
CLR
W6
MOV
W6, NVMADR
MOV
W6, NVMADRU
MOV
#0x40, W7
Step 3: Set NVMCON to erase 1 row of code memory.
0000
24071A
883B0A
MOV
#0x4071, W10
MOV
W10, NVMCON
Step 4: Unlock the NVMCON to erase 1 row of code memory.
0000
200558
883B38
200AA9
883B39
MOV
#0x55, W8
MOV
W8, NVMKEY
MOV
#0xAA, W9
MOV
W9, NVMKEY
Step 5: Initiate the erase cycle.
0000
0000
A8E761
000000
000000
A9E761
000000
BSET NVMCON, #WR
NOP
Externally time ‘P13a’ ms (see Section 13.0 “AC/DC Characteristics and
NOP
BCLR NVMCON, #WR
NOP
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