參數(shù)資料
型號(hào): DSEP2X101-04A
廠商: IXYS CORP
元件分類: 參考電壓二極管
英文描述: HiPerFRED Epitaxial Diode with soft recovery
中文描述: 100 A, 400 V, SILICON, RECTIFIER DIODE
封裝: MINIBLOC-4
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 37K
代理商: DSEP2X101-04A
2003 IXYS All rights reserved
1 - 2
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
-values
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
miniBLOC, SOT-227 B
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
μ
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
D4
I
FAV
V
RRM
= 400 V
t
rr
= 30 ns
= 2x 100 A
V
RSM
V
V
RRM
V
Type
400
400
DSEP 2x 101-04A
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
100
100
A
A
T
C
= 60°C; rectangular, d = 0.5
I
FSM
E
AS
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 4 A; L = 180 μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
1000
A
2
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
0.4
A
-40...+150
°C
°C
°C
150
-40...+150
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
1 mA
mounting torque (M4)
terminal connection torque (M4)
typical
200
W
2500
V~
M
d
1.1-1.5/9-13
1.1-1.5/9-13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
; T
VJ
= 25°C
1
4
mA
mA
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
V
F
I
F
= 100 A;
1.24
1.54
V
V
R
thJC
R
thCH
t
rr
0.6
K/W
K/W
with heatsink compound
0.1
I
F
= 1 A; -di/dt = 400 A/
μ
s;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 200 A; -di
F
/dt = 100 A/
μ
s
T
VJ
= 100°C
30
ns
I
RM
5.5
6.8
A
DSEP 2x 101-04A
相關(guān)PDF資料
PDF描述
DSEP2X60-12A HiPerFREDTM Epitaxial Diode with soft recovery
DSEP2X61-03A HiPerFRED Epitaxial Diode with soft recovery
DSEP2X61-12A ARRAY OF INDEPENDENT DIODES|SOT-227B
DSEP2X91-06A ARRAY OF INDEPENDENT DIODES|SOT-227B
DSEP2X91-03A HiPerFRED Epitaxial Diode with soft recovery
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