參數(shù)資料
型號(hào): DSEP2X61-12A
英文描述: ARRAY OF INDEPENDENT DIODES|SOT-227B
中文描述: 與獨(dú)立二極管組成的陣列|的SOT - 227B章
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 110K
代理商: DSEP2X61-12A
2000 IXYS All rights reserved
D 4 - 81
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
-values
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages D4 - 85-86
miniBLOC, SOT-227 B
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
μ
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 2x 61-12A
I
FAV
V
RRM
= 1200 V
t
rr
= 40 ns
= 2x 60 A
V
RSM
V
V
RRM
V
Type
1200
1200
DSEP 2x 61-12A
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
100
60
A
A
T
C
= 80
°
C; rectangular, d = 0.5
I
FSM
E
AS
T
VJ
= 45
°
C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25
°
C; non-repetitive
I
AS
= 16 A; L = 180 μH
V
A
= 1.25
·
V
R
typ.; f = 10 kHz; repetitive
800
A
28
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
1.6
A
-40...+150
°
C
°
C
°
C
150
-40...+150
T
C
= 25
°
C
50/60 Hz, RMS
I
ISOL
1 mA
mounting torque (M4)
terminal connection torque (M4)
typical
200
W
2500
V~
M
d
1.1-1.5/9-13
1.1-1.5/9-13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25
°
C
T
VJ
= 150
°
C V
R
= V
RRM
I
F
= 60 A;
V
R
= V
RRM
1
4
mA
mA
V
F
T
VJ
= 125
°
C
T
VJ
= 25
°
C
1.70
2.42
V
V
R
thJC
R
thCH
t
rr
0.6
K/W
K/W
0.1
I
F
= 1 A; -di/dt = 400 A/
μ
s;
V
R
= 30 V; T
VJ
= 25
°
C
V
R
= 100 V; I
F
= 200 A; -di
F
/dt = 100 A/
μ
s
T
VJ
= 100
°
C
40
ns
I
RM
8
A
9
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