參數(shù)資料
型號: DSEE29-06CC
廠商: IXYS CORP
元件分類: 參考電壓二極管
英文描述: HiPerDynFRED Epitaxial Diode(正向電流30A的HiPerDynFRED外延型二極管)
中文描述: 30 A, 300 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, ISOPLUS220, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 59K
代理商: DSEE29-06CC
HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
V
RRM
= 600 V
t
rr
= 30 ns
= 30 A
V
RRM
V
V
RRM
V
Type
600
300
DSEE29-06CC
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
60
30
A
A
T
C
= 115°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
200
A
T
VJ
= 25°C; non-repetitive
I
AS
= 3 A; L = 180 μH
1.2
mJ
I
AR
T
VJ
T
VJM
T
stg
T
L
P
tot
V
ISOL
F
C
Weight
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
0.3
A
-55...+175
175
-55...+150
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s 260
°
C
T
C
= 25°C
165
W
50/60 Hz RMS; I
ISOL
1 mA
2500
V~
Mounting force
11...65 / 2.5...15 N / lb
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C
V
R
= V
RRM
100
μA
T
VJ
= 150°C V
R
= V
RRM
1
mA
V
F
I
F
= 30 A;
T
VJ
= 125°C
T
VJ
= 25°C
1.01
1.26
V
V
R
thJC
R
thCH
t
rr
0.9
K/W
K/W
0.6
I
F
= 1 A; -di/dt = 200 A/μs;
V
R
= 30 V
30
ns
I
RM
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
4.5
7
A
98815 (04/01)
2001 IXYS All rights reserved
DSEE29-06CC
ADVANCE TECHNICAL INFORMATION
1 2 3
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Diodes connected in series
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
μ
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
相關(guān)PDF資料
PDF描述
DSEE29-12CC HiPerDynFRED Epitaxial Diode(正向電流30A的HiPerDynFRED外延型二極管)
DSEE55-24N1F Dual HiPerFRED Epitaxial Diode
DSEE8-06CC HiPerDynFRED Epitaxial Diode(HiPerDynFRED外延型二極管)
DSEI12-06A Fast Recovery Epitaxial Diode (FRED)
DSEI12-10A Fast Recovery Epitaxial Diode (FRED)
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