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參數(shù)資料
| 型號： | DSEE8-06CC |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HiPerDynFRED Epitaxial Diode(HiPerDynFRED外延型二極管) |
| 中文描述： | 10 A, 300 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, ISOPLUS220, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 61K |
| 代理商： | DSEE8-06CC |
HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Diodes connected in series
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
μ
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
V
RRM
= 600 V
t
rr
= 30 ns
= 10 A
V
RRM
V
V
RRM
V
Type
600
300
DSEE8-06CC
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
20
10
10
A
A
A
T
C
= 110°C; rectangular, d = 0.5
t
P
< 10 μs; rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
60
A
T
VJ
= 25°C; non-repetitive
I
AS
= 2 A; L = 180 μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
0.5
mJ
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
F
C
Weight
0.2
A
-55...+175
175
-55...+150
°C
°C
°C
T
C
= 25°C
60
W
50/60 Hz RMS; I
ISOL
≤
1 mA
2500
V~
Mounting force
11...65 / 2.4...11 N / lb
typical
3
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
V
R
= V
RRM
60
0.2
μA
mA
V
F
I
F
= 10 A;
T
VJ
= 125°C
T
VJ
= 25°C
1.3
1.75
V
V
R
thJC
R
thCH
t
rr
2.5
K/W
K/W
0.6
I
F
= 1 A; -di/dt = 50 A/μs;
V
R
= 30 V; T
VJ
= 25°C
30
ns
I
RM
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
2
2.4
A
98758 (12/00)
2000 IXYS All rights reserved
DSEE8-06CC
ADVANCE TECHNICAL INFORMATION
1 2 3
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DSEE8-08CC | 功能描述:二極管 - 通用，功率，開關(guān) 8 Amps 400V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| DSEI 120-06A | 制造商:IXYS 功能描述:Bulk |
| DSEI 120-12A | 制造商:IXYS 功能描述:Bulk |
| DSEI 12-06A | 制造商:IXYS 功能描述:Bulk |
| DSEI 2X61-02A | 功能描述:DIODE FRED 200V 71A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> 二極管，整流器 系列:- 標(biāo)準(zhǔn)包裝:10 系列:- 電壓 - 在 If 時為正向 (Vf)（最大）:1.45V @ 30A 電流 - 在 Vr 時反向漏電:15µA @ 400V 電流 - 平均整流 (Io)（每個二極管）:30A 電壓 - (Vr)（最大）:400V 反向恢復(fù)時間(trr):65ns 二極管類型:標(biāo)準(zhǔn) 速度:快速恢復(fù) = 200mA（Io） 二極管配置:2 個獨立式 安裝類型:底座安裝 封裝/外殼:ISOTOP 供應(yīng)商設(shè)備封裝:ISOTOP? 包裝:管件 |
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