參數(shù)資料
型號(hào)： DS90CR217MTD/NOPB
廠商： National Semiconductor
文件頁(yè)數(shù)： 13/18頁(yè)
文件大?。?/td> 0K
描述： IC TXRX 21BIT CHAN LINK 48TSSOP
產(chǎn)品培訓(xùn)模塊： Interconnect Solutions for LVDS Applications
標(biāo)準(zhǔn)包裝： 38
類型： 發(fā)射器
驅(qū)動(dòng)器/接收器數(shù)： 21/3
規(guī)程： LVDS
電源電壓： 3 V ~ 3.6 V
安裝類型： 表面貼裝
封裝/外殼： 48-TFSOP（0.240"，6.10mm 寬）
供應(yīng)商設(shè)備封裝： 48-TSSOP
包裝： 管件
產(chǎn)品目錄頁(yè)面： 1280 (CN2011-ZH PDF)
其它名稱： *DS90CR217MTD
*DS90CR217MTD/NOPB
DS90CR217MTD
SNLS226A – OCTOBER 2006 – REVISED FEBRUARY 2013
Electrical Characteristics (continued)
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
s
VOS
Offset Voltage (1)
1.12
1.25
1.37
V
5
ΔVOS
Change in VOS between Complimentary Output
35
mV
States
IOS
Output Short Circuit Current
VOUT = 0V, RL = 100Ω
3.5
5
mA
IOZ
Output TRI-STATE Current
PWR DWN = 0V, VOUT = 0V or VCC
±1
±10
μA
TRANSMITTER SUPPLY CURRENT
ICCTW
Transmitter Supply Current Worst Case (with
RL = 100Ω,
f = 33 MHz
28
42
mA
Loads)
CL = 5 pF,
f = 40 MHz
29
47
mA
Worst Case Pattern
f = 66 MHz
34
52
mA
f = 85 MHz
39
57
mA
ICCTZ
Transmitter Supply Current Power Down
PWR DWN = Low
Driver Outputs in TRI-STATE
10
55
μA
under Powerdown Mode
(1)
VOS previously referred as VCM.
Transmitter Switching Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol
Parameter
Min
Typ
Max
Units
LLHT
LVDS Low-to-High Transition Time (Figure 4)
0.75
1.5
ns
LHLT
LVDS High-to-Low Transition Time (Figure 4)
0.75
1.5
ns
TCIT
TxCLK IN Transition Time (Figure 5)
1.0
6.0
ns
TPPos0
Transmitter Output Pulse Position for Bit0 (Figure 12)
f = 85 MHz
0.20
0
0.20
ns
TPPos1
Transmitter Output Pulse Position for Bit1
1.48
1.68
1.88
ns
TPPos2
Transmitter Output Pulse Position for Bit2
3.16
3.36
3.56
ns
TPPos3
Transmitter Output Pulse Position for Bit3
4.84
5.04
5.24
ns
TPPos4
Transmitter Output Pulse Position for Bit4
6.52
6.72
6.92
ns
TPPos5
Transmitter Output Pulse Position for Bit5
8.20
8.40
8.60
ns
TPPos6
Transmitter Output Pulse Position for Bit6
9.88
10.08
10.28
ns
TCIP
TxCLK IN Period (Figure 7)
11.76
T
50
ns
TCIH
TxCLK IN High Time (Figure 7)
0.35T
0.5T
0.65T
ns
TCIL
TxCLK IN Low Time (Figure 7)
0.35T
0.5T
0.65T
ns
TSTC
TxIN Setup to TxCLK IN (Figure 7)
f = 85 MHz
2.5
ns
THTC
TxIN Hold to TxCLK IN (Figure 7)
0
ns
TCCD
TxCLK IN to TxCLK OUT Delay @ 25°C, VCC = 3.3V (Figure 8)
3.8
6.3
ns
TPLLS
Transmitter Phase Lock Loop Set (Figure 9)
10
ms
TPDD
Transmitter Powerdown Delay (Figure 11)
100
ns
TJIT
TxCLK IN Cycle-to-Cycle Jitter
2
ns
4
Copyright 2006–2013, Texas Instruments Incorporated
Product Folder Links: DS90CR217
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS90CR217MTDX 功能描述:串行器/解串器 - Serdes RoHS:否 制造商:Texas Instruments 類型:Deserializer 數(shù)據(jù)速率:1.485 Gbit/s 輸入類型:ECL/LVDS 輸出類型:LVCMOS 輸入端數(shù)量:1 輸出端數(shù)量:20 工作電源電壓:2.375 V to 2.625 V 工作溫度范圍:0 C to + 70 C 封裝 / 箱體:TQFP-64
DS90CR217MTDX/NOPB 功能描述:串行器/解串器 - Serdes RoHS:否 制造商:Texas Instruments 類型:Deserializer 數(shù)據(jù)速率:1.485 Gbit/s 輸入類型:ECL/LVDS 輸出類型:LVCMOS 輸入端數(shù)量:1 輸出端數(shù)量:20 工作電源電壓:2.375 V to 2.625 V 工作溫度范圍:0 C to + 70 C 封裝 / 箱體:TQFP-64
DS90CR218 制造商:NSC 制造商全稱:National Semiconductor 功能描述:+3.3V Rising Edge Data Strobe LVDS 21-Bit Channel Link Receiver - 75 MHz
DS90CR218A 制造商:NSC 制造商全稱:National Semiconductor 功能描述:+3.3V Rising Edge Data Strobe LVDS 21-Bit Channel Link - 85 MHz
DS90CR218A_06 制造商:NSC 制造商全稱:National Semiconductor 功能描述:+3.3V Rising Edge Data Strobe LVDS 21-Bit Channel Link - 12 MHz to 85 MHz
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