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參數(shù)資料
| 型號： | DS3803 |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | DRAM |
| 英文描述： | 1024K Flexible NV SRAM SIMM(1024K靈活的非易失性SRAM SIMM) |
| 中文描述： | 32K X 32 NON-VOLATILE SRAM MODULE, 70 ns, SMA72 |
| 封裝： | SIMM-72 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 83K |
| 代理商： | DS3803 |
DS3803
042398 8/10
TIMING DIAGRAM: POWER–DOWN AND POWER–UP
V
CC
2.7V
t
F
t
PD
t
R
t
REC
BACKUP CURRENT
SUPPLIED FROM
LITHIUM BATTERY
CE,
WE
V
TP
SEE NOTE 10
t
DR
SLEWS WITH
V
CC
t
PU
V
IH
POWER–DOWN/POWER–UP TIMING
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
V
CC
Fail Detect to CE and WE
Inactive
t
PD
1.5
μ
s
V
CC
Slew from V
TP
to 0V
t
F
300
μ
s
V
CC
Slew from 0V to V
TP
t
R
300
μ
s
V
CC
Valid to CE and WE Inactive
t
PU
2
ms
V
Valid to End of Write
Protection
t
REC
125
ms
(t
A
= 25
°
C)
NOTES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Expected Data Retention Time
t
DR
10
years
9
WARNING
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery backup mode.
NOTES:
1. WE is high throughout read cycle.
2. OE = V
IH
or V
IL
. If OE = VIH during write cycle, the output buffers remain in a high impedance state.
3. t
WP
is specified as the logical AND of CE and WE. t
WP
is measured from the latter of CE or WE going low to the
earlier of CE or WE going high.
4. t
DS
is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS3803-70 | 功能描述:IC NVSRAM 1MBIT 70NS 72SIMM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產品目錄頁面:1445 (CN2011-ZH PDF) |
| DS3816C-512 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mb Advanced NV SRAM with Clock |
| DS382 | 制造商:Miyama Electric 功能描述: |
| DS3821 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| DS3832C-311 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V, 32Mb Advanced NV SRAM with Clock |
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