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| 型號(hào)： | DS32C35-33IND# |
| 廠(chǎng)商： | Maxim Integrated Products |
| 文件頁(yè)數(shù)： | 18/22頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC RTC W/TCXO 20-SOIC |
| 產(chǎn)品變化通告： | Product Discontinuation 28/Nov/2011 |
| 標(biāo)準(zhǔn)包裝： | 37 |
| 類(lèi)型： | 時(shí)鐘/日歷 |
| 特點(diǎn)： | 警報(bào)器，F(xiàn)RAM，閏年，方波輸出，TCXO/晶體 |
| 存儲(chǔ)容量： | 8KB |
| 時(shí)間格式： | HH:MM:SS（12/24 小時(shí)） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | I²C，2 線(xiàn)串口 |
| 電源電壓： | 2.7 V ~ 3.63 V |
| 電壓 - 電源，電池： | 2.3 V ~ 3.6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類(lèi)型： | 表面貼裝 |
| 封裝/外殼： | 20-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 20-SOIC W |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁(yè)面： | 1433 (CN2011-ZH PDF) |
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DS32B35/DS32C35
Accurate I2C RTC with Integrated
TCXO/Crystal/FRAM
_____________________________________________________________________
5
POWER-SWITCH CHARACTERISTICS
(TA = -40°C to +85°C, Note 2, see the Power-Switch Timing diagram.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
VCC Fall Time; VPF(MAX) to
VPF(MIN)
tVCCF
300
μs
VCC Rise Time; VPF(MIN) to
VPF(MAX)
tVCCR
0
μs
Recovery at Power-Up
tREC
(Note 14)
300
ms
Note 2:
Limits at -40°C are guaranteed by design and not production tested.
Note 3:
All voltages are referenced to ground.
Note 4:
To minimize current drain on VBAT when the internal supply is switched to VBAT, the VIH minimum must be higher than
VBAT - 0.6V. Otherwise, there is significant current drain due to the input stage at the SCL and SDA pins.
Note 5:
The pullup resistor voltage on the 32kHz and INT/SQW pins can be up to 5.5V maximum regardless of the voltage on VCC.
Note 6:
Current is the averaged input current, which includes the temperature conversion current.
Note 7:
The RST pin has an internal 50k
Ω (nominal) pullup resistor to VCC.
Note 8:
After this period, the first clock pulse is generated.
Note 9:
A device must internally provide a hold time of at least 300ns for the SDA signal (referred to as the VIH(MIN) of the SCL sig-
nal) to bridge the undefined region of the falling edge of SCL.
Note 10: The maximum tHD:DAT needs only to be met if the device does not stretch the low period (tLOW) of the SCL signal.
Note 11: A fast-mode device can be used in a standard-mode system, but the requirement tSU:DAT
≥ 250ns must then be met. This
is automatically the case if the device does not stretch the low period of the SCL signal. If such a device does stretch the
low period of the SCL signal, it must output the next data bit to the SDA line tR(MAX) + tSU:DAT = 1000 + 250 = 1250ns
before the SCL line is released.
Note 12: CB—total capacitance of one bus line in pF.
Note 13: The parameter tOSF is the period of time the oscillator must be stopped for the OSF flag to be set over the voltage range of
0.0V
≤ VCC ≤ VCC(MAX) and 2.0V ≤ VBAT ≤ 3.6V.
Note 14: This delay applies only if the oscillator is enabled and running. If the EOSC bit is a 1, tREC is bypassed and RST immedi-
ately goes high. The state of RST does not affect the I2C interface, RTC, TCXO, or FRAM operation.
WARNING: Negative undershoots below -0.3V while the part is in battery-backed mode may cause loss of data.
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| DS32C35-33IND# | 功能描述:實(shí)時(shí)時(shí)鐘 w/Integrated TCXO/Crystal/FRAM RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線(xiàn)接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
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