參數(shù)資料
型號(hào)： DS28E04-100
元件分類： DRAM
英文描述： 4096-Bit Addressable 1-Wire EEPROM with PIO
中文描述： 4096位、可尋址、1-Wire EEPROM，帶有PIO
文件頁數(shù)： 8/36頁
文件大?。?/td> 347K
代理商： DS28E04-100
DS28E04-100: 4096-Bit 1-Wire Addressable EEPROM with PIO
8 of 36
Figure 5. Memory Map
Address locations 0000h to 021Fh are nonvolatile. Address locations 0220h to 0225 are volatile.
ADDRESS RANGE
TYPE
DESCRIPTION
PROTECTION CODES (NOTES)
0000h to 001Fh
0020h to 003Fh
0040h to 005Fh
0060h to 007Fh
0080h to 009Fh
00A0h to 00BFh
00C0h to 0DFh
00E0h to 00FFh
0100h to 011Fh
0120h to 013Fh
0140h to 015Fh
0160h to 017Fh
0180h to 019Fh
01A0h to 01BFh
01C0h to 01DFh
01E0h to 01FFh
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
Data Memory Page 0
Data Memory Page 1
Data Memory Page 2
Data Memory Page 3
Data Memory Page 4
Data Memory Page 5
Data Memory Page 6
Data Memory Page 7
Data Memory Page 8
Data Memory Page 9
Data Memory Page 10
Data Memory Page 11
Data Memory Page 12
Data Memory Page 13
Data Memory Page 14
Data Memory Page 15
(Protection controlled by address 0200h)
(Protection controlled by address 0201h)
(Protection controlled by address 0202h)
(Protection controlled by address 0203h)
(Protection controlled by address 0204h)
(Protection controlled by address 0205h)
(Protection controlled by address 0206h)
(Protection controlled by address 0207h)
(Protection controlled by address 0208h)
(Protection controlled by address 0209h)
(Protection controlled by address 020Ah)
(Protection controlled by address 020Bh)
(Protection controlled by address 020Ch)
(Protection controlled by address 020Dh)
(Protection controlled by address 020Eh)
(Protection controlled by address 020Fh)
55h: Write Protected; AAh: EPROM mode.
Address 0200h is associated with memory
page 0, address 0201h with page 1, etc.
(See text)
(Reads 55h or AAh)
(Undefined value)
(The lower two bits are valid)
(The lower two bits are valid)
(The lower two bits are valid)
0200h
1)
to 020Fh
1)
R/(W)
Protection Control Pages 0
to 15
0210h
1)
0211h
0212h to 021Dh
021Eh to 021Fh
220h
221h
222h
223h
R/(W)
R
N/A
R
R
R
R
R/W
2)
Register Page Lock
Factory Byte
Reserved
Factory Bytes
PIO Logic State
PIO Output Latch State
PIO Activity Latch State
Conditional Search PIO
Selection Mask
Conditional Search Polarity
Selection
Conditional Search Control
and Status Register
224h
R/W
2)
225h
R/W
2)
1)
Once programmed to AAh or 55h this address becomes read-only. All other codes can be stored but will neither
write-protect the address nor activate any function.
2)
Limited write access through Write Register command
相關(guān)PDF資料
PDF描述
DS28E04S-100 4096-Bit Addressable 1-Wire EEPROM with PIO
DS3151 Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs
DS3151N Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs
DS3152 Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs
DS3152N Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS28E04S100 制造商:Maxim Integrated Products 功能描述:
DS28E04S-100 功能描述:電可擦除可編程只讀存儲(chǔ)器 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
DS28E04S-100/T 功能描述:電可擦除可編程只讀存儲(chǔ)器 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
DS28E04S-100+ 功能描述:電可擦除可編程只讀存儲(chǔ)器 4096-Bit Addressable 1-Wire 電可擦除可編程只讀存儲(chǔ)器 w/PIO RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
DS28E04S-100+T 功能描述:電可擦除可編程只讀存儲(chǔ)器 4096-Bit Addressable 1-Wire 電可擦除可編程只讀存儲(chǔ)器 w/PIO RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
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