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參數(shù)資料
| 型號： | DS28E04-100 |
| 元件分類： | DRAM |
| 英文描述： | 4096-Bit Addressable 1-Wire EEPROM with PIO |
| 中文描述： | 4096位、可尋址、1-Wire EEPROM，帶有PIO |
| 文件頁數(shù)： | 4/36頁 |
| 文件大?。?/td> | 347K |
| 代理商： | DS28E04-100 |
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DS28E04-100: 4096-Bit 1-Wire Addressable EEPROM with PIO
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Note 21:
Current drawn during the EEPROM programming interval. If the device does not get V
CC
power, the pullup circuit on IO during the
programming interval should be such that the voltage at IO is greater than or equal to V
(min). If V
in the system is close to
Vpup(min) then a low-impedance bypass of R
PUP
that can be activated during programming may need to be added.
The t
PROG
interval begins t
REHmax
after the trailing rising edge on IO for the last time slot of the E/S byte for a valid Copy Scratchpad
sequence. Interval ends once the device's self-timed EEPROM programming cycle is complete and the current drawn by the
device has returned from I
PROG
to I
L
or I
CCS
, respectively.
Note 22:
LEGACY VALUES
DS28E04-100 VALUES
STANDARD SPEED
MIN
65μs
1)
(undef)
504μs
640μs
15μs
60μs
60μs
240μs
60μs
120μs
PARAMETER
STANDARD SPEED
MIN
61μs
480μs
15μs
60μs
60μs
OVERDRIVE SPEED
MIN
7μs
48μs
2μs
8μs
6μs
OVERDRIVE SPEED
MIN
9μs
53μs
2μs
8μs
7μs
t
SLOT
(incl. t
REC
)
t
RSTL
t
PDH
t
PDL
t
W0L
MAX
(undef)
(undef)
60μs
240μs
120μs
MAX
(undef)
80μs
6μs
24μs
16μs
MAX
(undef)
80μs
7μs
26μs
16μs
1)
Intentional change, longer recovery time requirement due to modified 1-Wire front end.
PIN DESCRIPTION
PIN
NAME
1
A3
Address bit input (place value = 8), with weak pullup.
2
A2
Address bit input (place value = 4), with weak pullup.
3
A1
Address bit input (place value = 2), with weak pullup.
4
A0
Least significant address bit input (place value = 1), with weak pullup.
5, 12
GND
Ground Reference
6, 11
N.C.
Not Connected
7
V
CC
Optional power supply for the chip; float or ground if V
CC
power is not available.
8
POL
Power-up polarity (logical state) for P0 and P1; pin has a weak pulldown.
9
P0
Remote-controlled I/O pin, open drain with weak pulldown.
10
P1
Remote-controlled I/O pin, open drain with weak pulldown.
13
A6
Address bit input (place value = 64), with weak pullup.
14
A5
Address bit input (place value = 32), with weak pullup.
15
A4
Address bit input (place value = 16), with weak pullup.
16
IO
1-Wire Bus Interface. Open drain, requires external pullup resistor.
DETAILED DESCRIPTION
The DS28E04-100 combines 4096 bits of EEPROM, a 16-byte control page, two general-purpose PIO pins, seven
external address pins, and a fully featured 1-Wire interface in a single chip. PIO outputs are configured as open-
drain and provide an on-resistance of 100 max. A robust PIO channel-access communication protocol ensures
that PIO output-setting changes occur error-free. The DS28E04-100 has an additional memory area called the
scratchpad that acts as a buffer when writing to the main memory or the control page. Data is first written to the
scratchpad from which it can be read back. The copy scratchpad command transfers the data to its final memory
location. Each DS28E04-100 has a device ID number that is 64 bits long. The user can define seven bits of this
number through address pins. The remaining 57 bits are factory-lasered into the chip. The device ID number
guarantees unique identification and is used to address the device in a multidrop 1-Wire network environment,
where multiple devices reside on a common 1-Wire bus and operate independently of each other. The DS28E04-
100 also supports 1-Wire conditional search capability based on PIO conditions or power-on-reset activity. The
DS28E04-100 has an optional V
CC
supply connection. When an external supply is absent, device power is supplied
parasitically from the 1-Wire bus. When an external supply is present, PIO states are maintained in the absence of
the 1-Wire bus power source. Applications of the DS28E04-100 include autoconfiguration and state monitoring of
modular systems such as central-office switches, cellular base stations, access products, optical network units, and
PBXs, and accessory/PC board identification.
FUNCTION
相關PDF資料 |
PDF描述 |
|---|---|
| DS28E04S-100 | 4096-Bit Addressable 1-Wire EEPROM with PIO |
| DS3151 | Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs |
| DS3151N | Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs |
| DS3152 | Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs |
| DS3152N | Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS28E04S100 | 制造商:Maxim Integrated Products 功能描述: |
| DS28E04S-100 | 功能描述:電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| DS28E04S-100/T | 功能描述:電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| DS28E04S-100+ | 功能描述:電可擦除可編程只讀存儲器 4096-Bit Addressable 1-Wire 電可擦除可編程只讀存儲器 w/PIO RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| DS28E04S-100+T | 功能描述:電可擦除可編程只讀存儲器 4096-Bit Addressable 1-Wire 電可擦除可編程只讀存儲器 w/PIO RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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