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參數(shù)資料
| 型號： | DS2422X |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Memory IC:Other |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, UUC |
| 文件頁數(shù)： | 14/23頁 |
| 文件大?。?/td> | 146K |
| 代理商： | DS2422X |
DS2422/DS2423
021998 21/23
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
–0.5V to +7.0V
Operating Temperature
–40
°C to +85°C
Storage Temperature
–55
°C to +125°C
Soldering Temperature
260
°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods of time may affect reliability.
DC CHARACTERISTICS
(VPUP=2.8V to 6.0V; VBAT=2.8 to 5.5V;–40°C to +85°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Logic 1
VIH
2.2
V
1, 8
Logic 0
VIL
–0.3
+0.8
V
1, 9
Output Logic Low @4 mA
VOL
0.4
V
1
Output Logic High
VOH
VPUP
6.0
V
1, 2
Input Load Current
IL
5
A
3
Standby Current
IBATS
200
nA
I/O Operate Charge
QBATO
200
nC
12
CAPACITANCE
(tA = 25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
I/O (1–Wire)
CIN/OUT
100
800
pF
6
COUNTER INPUT CHARACTERISTICS
(VPUP=2.8V to 6.0V; VBAT=2.8 to 5.5V;–40°C to +85°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Trip Point
VTRIP
1/2 VBAT
V
Logic 1
VINH
VTRIP
VBAT
+0.3
V
1, 10
Logic 0
VINL
–0.3
VTRIP
V
1
Internal Pull–Up Resistor
RPI
28
M
11
Debounce Time
TDEB
290
s
Pulse Width (Active Low)
TPW
1
s
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