
DS1825 Programmable Resolution 1-Wire Digital Thermometer With 4-Bit ID
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DESCRIPTION (cont.)
Each DS1825 has a unique 64-bit serial code, which allows multiple DS1825s to function on the same 1-Wire bus;
thus, it is simple to use one microprocessor to control many DS1825s distributed over a large area. In addition, the
4-bit location address can be used to identify specific temperature sensors in the system without requiring a wide
lookup table. Applications that can benefit from this feature include HVAC environmental controls, temperature
monitoring systems inside buildings, equipment or machinery, and process monitoring and control systems.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.5V to +6.0V
Operating Temperature Range
-55 C to +125 C
Storage Temperature Range
-55 C to +125 C
Solder Dip Temperature (10s)
+260 C
Reflow Oven Temperature
+220 C
These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(-55°C to +125°C; V
DD
= 3.0V to 3.7V)
PARAMETER
SYMBOL
CONDITION
Supply Voltage
V
DD
Local Power
Parasite Power
Pullup Supply Voltage
V
PU
Local Power
-10°C to +85°C
Thermometer Error
t
ERR
-55°C to +125°C
Programming
Resistor: AD0-AD3
DQ Input Logic Low
V
IL(DQ)
MIN
+3.0
+3.0
+3.0
TYP
MAX
+3.7
+3.7
V
DD
±0.5
±2
UNITS
V
NOTES
1
V
1, 2
°C
°C
3
R
PGM
0
10
k
12
-0.3
+0.7
V
1, 4, 5
Local Power
+2.2
DQ Input Logic High
V
IH(DQ)
Parasite Power
+3.0
The lower of
3.7
or
V
DD
+ 0.3
V
1, 6
Sink Current
Standby Current
Active Current
DQ Input Current
Drift
NOTES:
1.
All voltages are referenced to ground.
2.
The Pullup Supply Voltage specification assumes that the pullup device is ideal, and therefore the high level of the pullup is equal to V
PU
.
In order to meet the V
spec of the DS1825, the actual supply rail for the strong pullup transistor must include margin for the voltage drop
across the transistor when it is turned on; thus: V
PU_ACTUAL
= V
PU_IDEAL
+ V
TRANSISTOR
.
3.
See typical performance curve in Figure 18
4.
Logic low voltages are specified at a sink current of 4mA.
5.
To guarantee a presence pulse under low voltage parasite power conditions, V
ILMAX
may have to be reduced to as low as 0.5V.
6.
Logic high voltages are specified at a source current of 1mA.
7.
Standby current specified up to 70 C. Standby current typically is 3 A at 125 C.
8.
To minimize I
DDS
, DQ should be within the following ranges: GND DQ GND + 0.3V or V
DD
- 0.3V DQ V
DD
.
9.
Active current refers to supply current during active temperature conversions or EEPROM writes.
10.
DQ line is high (“hi-Z” state).
11.
Drift data is based on a 1000 hour stress test at 125°C.
12.
Inputs AD0-AD3 must be tied either High or Low. A "Low" is a connection to the GND terminal. A "High" connection varies with usage of
the DS1825. When connected as a parasite powered sensor, a connection to DQ is considered a High. When powered through the V
DD
pin, a connection to V
DD
is a High. If left floating, the input values are indeterminate and may be either logical "0" or logical "1." See
Figures 20 and 21 for details. When optional programming resistors are used, their maximum values are 10,000 .
I
L
V
I/O
= 0.4V
V
DD
= 3.7V
4.0
mA
nA
mA
μ
A
°C
1
I
DDS
I
DD
I
DQ
500
0.65
5
±0.2
1000
1.5
7, 8
9
10
11