參數(shù)資料
型號: DS1642
英文描述: Nonvolatile Timekeeping RAM
中文描述: 非易失時鐘RAM
文件頁數(shù): 4/11頁
文件大小: 138K
代理商: DS1642
DS1642
4 of 11
RETRIEVING DATA FROM RAM OR CLOCK
The DS1642 is in the read mode whenever
WE
(write enable) is high, and
CE
(chip enable) is low. The
device architecture allows ripple–through access to any of the address locations in the NV SRAM. Valid
data will be available at the DQ pins within t
AA
after the last address input is stable, providing that the
CE
and
OE
access times and states are satisfied. If
CE
or
OE
access times are not met, valid data will be
available at the latter of chip enable access (t
CEA
) or at output enable access time (t
OEA
). The state of the
data input/output pins (DQ) is controlled by
CE
and
OE
. If the outputs are activated before t
AA
, the data
lines are driven to an intermediate state until t
AA
. If the address inputs are changed while
CE
and
OE
remain valid, output data will remain valid for output data hold time (t
OH
) but will then go indeterminate
until the next address access.
WRITING DATA TO RAM OR CLOCK
The DS1642 is in the write mode whenever
WE
and
CE
are in their active state. The start of a write is
referenced to the latter occurring transition of
WE
or
CE
. The addresses must be held valid throughout
the cycle.
CE
or
WE
must return inactive for a minimum of t
WR
prior to the initiation of another read or
write cycle. Data in must be valid t
DS
prior to the end of write and remain valid for t
DH
afterward. In a
typical application, the
OE
signal will be high during a write cycle. However,
OE
can be active provided
that care is taken with the data bus to avoid bus contention. If
OE
is low prior to
WE
transitioning low
the data bus can become active with read data defined by the address inputs. A low transition on
WE
will
then disable the outputs t
WEZ
after
WE
goes active.
DATA RETENTION MODE
When V
CC
is within nominal limits (V
CC
> 4.5 volts) the DS1642 can be accessed as described above by
read or write cycles. However, when V
CC
is below the power-fail point V
PF
(point at which write
protection occurs) the internal clock registers and RAM is blocked from access. This is accomplished
internally by inhibiting access via the
CE
signal. When V
CC
falls below the level of the internal battery
supply, power input is switched from the V
CC
pin to the internal battery and clock activity, RAM, and
clock data are maintained from the battery until V
CC
is returned to nominal level.
BATTERY LONGEVITY
The DS1642 has a lithium power source that is designed to provide energy for clock activity, and clock
and RAM data retention when the V
CC
supply is not present. The capability of this internal power supply
is sufficient to power the DS1642 continuously for the life of the equipment in which it is installed. For
specification purposes, the life expectancy is 10 years at 25
°
C with the internal clock oscillator running in
the absence of V
CC
power. Each DS1642 is shipped from Dallas Semiconductor with its lithium energy
source disconnected, guaranteeing full energy capacity. When V
CC
is first applied at a level greater than
V
PF
, the lithium energy source is enabled for battery backup operation. Actual life expectancy of the
DS1642 will be much longer than 10 years since no lithium battery energy is consumed when V
CC
is
present.
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