- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄9320 > DS1556W-120IND (Maxim Integrated Products)IC RTC RAM Y2K 3.3V 120NS 32EDIP PDF資料下載
參數(shù)資料
| 型號(hào)： | DS1556W-120IND |
| 廠商： | Maxim Integrated Products |
| 文件頁(yè)數(shù)： | 14/18頁(yè) |
| 文件大小： | 0K |
| 描述： | IC RTC RAM Y2K 3.3V 120NS 32EDIP |
| 產(chǎn)品培訓(xùn)模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標(biāo)準(zhǔn)包裝： | 11 |
| 類型： | 時(shí)鐘/日歷 |
| 特點(diǎn)： | 警報(bào)器，閏年，NVSRAM，監(jiān)視計(jì)時(shí)器，Y2K |
| 存儲(chǔ)容量： | 128KB |
| 時(shí)間格式： | HH:MM:SS（24 小時(shí)） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | 并聯(lián) |
| 電源電壓： | 2.97 V ~ 3.63 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 通孔 |
| 封裝/外殼： | 32-DIP 模塊（0.600"，15.24mm） |
| 供應(yīng)商設(shè)備封裝： | 32-EDIP |
| 包裝： | 管件 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)當(dāng)前第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
DS1556 1M, Nonvolatile, Y2K-Compliant Timekeeping RAM
5 of 18
a typical application, the
OE signal will be high during a write cycle. However, OE can be active
provided that care is taken with the data bus to avoid bus contention. If
OE is low prior to WE
transitioning low, the data bus can become active with read data defined by the address inputs. A low
transition on
WE will then disable the outputs t
WEZ after WE goes active.
DATA-RETENTION MODE
The 5V device is fully accessible and data can be written and read only when VCC is greater than VPF.
However, when VCC is below the power-fail point VPF (point at which write protection occurs) the
internal clock registers and SRAM are blocked from any access. When VCC falls below the battery switch
point VSO (battery supply level), device power is switched from the VCC pin to the internal backup lithium
battery. RTC operation and SRAM data are maintained from the battery until VCC is returned to nominal
levels.
The 3.3V device is fully accessible and data can be written and read only when VCC is greater than VPF.
hen VCC falls below VPF, access to the device is inhibited. If VPF is less than VSO, the device power is
switched from VCC to the internal backup lithium battery when VCC drops below VPF. If VPF is greater
than VSO, the device power is switched from VCC to the internal backup lithium battery when VCC drops
below VSO. RTC operation and SRAM data are maintained from the battery until VCC is returned to
nominal levels.
All control, data, and address signals must be powered down when VCC is powered down.
BATTERY LONGEVITY
The DS1556 has a lithium power source that is designed to provide energy for the clock activity, and
clock and RAM data retention when the VCC supply is not present. The capability of this internal power
supply is sufficient to power the DS1556 continuously for the life of the equipment in which it is
installed. For specification purposes, the life expectancy is 10 years at 25
C with the internal clock
oscillator running in the absence of VCC. Each DS1556 is shipped from Maxim with its lithium energy
source disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than
VPF, the lithium energy source is enabled for battery backup operation. Actual life expectancy of the
DS1556 will be much longer than 10 years since no internal battery energy is consumed when VCC is
present.
INTERNAL BATTERY MONITOR
The DS1556 constantly monitors the battery voltage of the internal battery. The Battery Low Flag (BLF)
bit of the Flags Register (B4 of 1FFF0h) is not writable and should always be a 0 when read. If a 1 is ever
present, an exhausted lithium energy source is indicated and both the contents of the RTC and RAM are
questionable.
POWER-ON RESET
A temperature compensated comparator circuit monitors the level of VCC. When VCC falls to the power
fail trip point, the
RST signal (open drain) is pulled low. When V
CC returns to nominal levels, the RST
signal continues to be pulled low for a period of 40 ms to 200 ms. The power-on reset function is
independent of the RTC oscillator and thus is operational whether or not the oscillator is enabled.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1248W-120IND | IC NVSRAM 1MBIT 120NS 32DIP |
| DS1746W-120IND | IC RTC RAM Y2K 3.3V 120NS 32EDIP |
| VI-BN4-IU-F2 | CONVERTER MOD DC/DC 48V 200W |
| MCP4161-104E/P | IC POT DGTL SNGL 100K SPI 8DIP |
| VI-BNM-MY-F4 | CONVERTER MOD DC/DC 10V 50W |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1556W-120IND+ | 功能描述:實(shí)時(shí)時(shí)鐘 1M NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1556WP-120 | 功能描述:實(shí)時(shí)時(shí)鐘 1M NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1556WP-120+ | 功能描述:實(shí)時(shí)時(shí)鐘 1M NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1556WP-120IND | 功能描述:實(shí)時(shí)時(shí)鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1556WP-120IND+ | 功能描述:實(shí)時(shí)時(shí)鐘 1M NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。