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參數(shù)資料
| 型號(hào)： | DS1556W-120IND |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 13/18頁 |
| 文件大小： | 0K |
| 描述： | IC RTC RAM Y2K 3.3V 120NS 32EDIP |
| 產(chǎn)品培訓(xùn)模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標(biāo)準(zhǔn)包裝： | 11 |
| 類型： | 時(shí)鐘/日歷 |
| 特點(diǎn)： | 警報(bào)器，閏年，NVSRAM，監(jiān)視計(jì)時(shí)器，Y2K |
| 存儲(chǔ)容量： | 128KB |
| 時(shí)間格式： | HH:MM:SS（24 小時(shí)） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | 并聯(lián) |
| 電源電壓： | 2.97 V ~ 3.63 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 通孔 |
| 封裝/外殼： | 32-DIP 模塊（0.600"，15.24mm） |
| 供應(yīng)商設(shè)備封裝： | 32-EDIP |
| 包裝： | 管件 |
DS1556 1M, Nonvolatile, Y2K-Compliant Timekeeping RAM
4 of 18
Figure 1. Block Diagram
Table 1. Operating Modes
VCC
CE
OE
WE
DQ0–DQ7
MODE
POWER
VIH
X
High-Z
Deselect
Standby
VIL
X
VIL
DIN
Write
Active
VIL
VIH
DOUT
Read
Active
VCC > VPF
VIL
VIH
High-Z
Read
Active
VSO < VCC <VPF
X
High-Z
Deselect
CMOS Standby
VCC <VSO < VPF
X
High-Z
Data Retention
Battery Current
DATA READ MODE
The DS1556 is in the read mode whenever
CE (chip enable) is low and WE (write enable) is high. The
device architecture allows ripple-through access to any valid address location. Valid data will be available
at the DQ pins within tAA after the last address input is stable, providing that CE and OE access times are
satisfied. If
CE or OE access times are not met, valid data will be available at the latter of chip enable
access (tCEA) or at output enable access time (tOEA). The state of the data input/output pins (DQ) is
controlled by
CE and OE. If the outputs are activated before t
AA, the data lines are driven to an
intermediate state until tAA. If the address inputs are changed while CE and OE remain valid, output data
will remain valid for output data hold time (tOH) but will then go indeterminate until the next address
access.
DATA WRITE MODE
The DS1556 is in the write mode whenever
WE and CE are in their active state. The start of a write is
referenced to the latter occurring transition of
WE or CE. The addresses must be held valid throughout the
cycle.
CE and WE must return inactive for a minimum of t
WR prior to the initiation of a subsequent read
or write cycle. Data in must be valid tDS prior to the end of the write and remain valid for tDH afterward. In
Maxim
DS1556
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1556W-120IND+ | 功能描述:實(shí)時(shí)時(shí)鐘 1M NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1556WP-120 | 功能描述:實(shí)時(shí)時(shí)鐘 1M NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1556WP-120+ | 功能描述:實(shí)時(shí)時(shí)鐘 1M NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1556WP-120IND | 功能描述:實(shí)時(shí)時(shí)鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1556WP-120IND+ | 功能描述:實(shí)時(shí)時(shí)鐘 1M NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲(chǔ)容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
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