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參數(shù)資料
| 型號： | DS14285SN |
| 英文描述： | Real Time Clock with NV RAM Control |
| 中文描述： | 實時時鐘的非易失RAM控制 |
| 文件頁數(shù)： | 5/25頁 |
| 文件大?。?/td> | 303K |
| 代理商： | DS14285SN |
DS14285/DS14287
5 of 25
In a typical application
RESET
can be connected to V
CC
. This connection will allow the DS14287 to go in
and out of power fail without affecting any of the control registers.
CEI
(External RAM Chip Enable Input, active low)
-
CEI
should be driven low to enable the external
RAM.
CEI
is internally pulled up with a 50k
resistor.
CEO
(External RAM Chip Enable Output, active low)
- When V
CC
is greater than 4.25 volts (typical),
CEO
will reflect
CEI
provided the
RESET
is at a logic high. When V
CC
is less than 4.25 volts (typical),
CEO
will be forced to an inactive level regardless of
CEI
.
V
CCO
(External RAM Power Supply Output)
- V
CCO
provides the higher of V
CC
or V
BAT
through an
internal switch to power an external RAM.
DS14285 Only
X1, X2
- Connections for a standard 32.768 kHz quartz crystal. The internal oscillator circuitry is
designed for operation with a crystal having a specified load capacitance (CL) of 6 pF. The crystal is
connected directly to the X1 and X2 pins. There is no need for external capacitors or resistors. Note: X1
and X2 are very high impedance nodes. It is recommended that they and the crystal be guard–ringed with
ground and that high frequency signals be kept away from the crystal area. For more information on
crystal selection and crystal layout considerations, please consult Application Note 58, “Crystal
Considerations with Dallas Real Time Clocks.”
V
BAT
– Battery input for any standard 3-volt lithium cell or other energy source. See the Power-Up/Down
section for considerations in selecting the size of the external energy source
The battery should be connected directly to the V
BAT
pin. A diode must not be placed in series with the
battery to the VBAT pin. Furthermore, a diode is not necessary because reverse charging current
protection circuitry is provided internal to the device and has passed the requirements of Underwriters
Laboratories for UL listing.
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| DS1490F | 2-in-1 Fob |
| DS1602 | Elapsed Time Counter |
| DS1603 | Elapsed Time Counter Module |
| DS1609 | Dual Port RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS14285SN/T&R | 制造商:Maxim Integrated Products 功能描述:IC RTC W/NV RAM CNTRL IND 24SOIC |
| DS14285SN/T&R | 功能描述:IC RTC W/NV RAM CNTRL IND 24SOIC RoHS:否 類別:集成電路 (IC) >> 時鐘/計時 - 實時時鐘 系列:- 產(chǎn)品培訓模塊:Obsolescence Mitigation Program 標準包裝:1 系列:- 類型:時鐘/日歷 特點:警報器，閏年，SRAM 存儲容量:- 時間格式:HH:MM:SS（12/24 小時） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
| DS14285SN/TR | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Real-Time Clock with NV RAM |
| DS14285SN+ | 功能描述:實時時鐘 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS14285SN+T&R | 制造商:Maxim Integrated Products 功能描述:IC RTC W/NV RAM CNTRL 24-SOIC 制造商:DSC 功能描述: |
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