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參數(shù)資料
| 型號(hào)： | DS1350W |
| 英文描述： | 3.3V 4096K Nonvolatile SRAM with Battery Monitor |
| 中文描述： | 3.3V、4096K非易失SRAM，帶有電池監(jiān)視器 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | DS1350W |
DS1350W
3.3V 4096K Nonvolatile SRAM
with Battery Monitor
DS1350W
PRELIMINARY
022598 1/11
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Power supply monitor resets processor when V
CC
power loss occurs and holds processor in reset during
V
CC
ramp–up
Battery monitor checks remaining capacity daily
Read and write access times as fast as 150 ns
Unlimited write cycle endurance
Typical standby current 50
μ
A
Upgrade for 512K x 8 SRAM, EEPROM or Flash
Lithium battery is electrically disconnected to retain
freshness until power is applied for the first time
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
New PowerCap Module (PCM) package
– Directly surface–mountable module
– Replaceable snap–on PowerCap provides lith-
ium backup battery
– Standardized pinout for all nonvolatile SRAM
products
– Detachment feature on PowerCap allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
BW
A15
A16
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
WE
RST
V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
A18
A17
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
34(USES DS9034PC POWERCAP)
GND
V
BAT
PIN DESCRIPTION
A0–A18
DQ0–DQ7
CE
WE
OE
RST
BW
V
CC
GND
NC
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Reset Output
– Battery Warning Output
– Power (+3.3 Volts)
– Ground
– No Connect
DESCRIPTION
The DS1350W 3.3V 4096K Nonvolatile SRAM is a
4,194,304–bit, fully static, nonvolatile SRAM organized
as 524,288 words by eight bits. Each NV SRAM has a
self–contained lithium energy source and control cir-
cuitry which constantly monitors V
CC
for an out–of–tol-
erance condition. When such a condition occurs, the
lithium energy source is automatically switched on and
write protection is unconditionally enabled to prevent
data corruption. Additionally, the DS1350W has dedi-
cated circuitry for monitoring the status of V
CC
and the
status of the internal lithium battery. DS1350W devices
in the PowerCap Module package are directly surface
mountable and are normally paired with a DS9034PC
PowerCap to form a complete Nonvolatile SRAM mod-
ule. The devices can be used in place of 512K x 8
SRAM, EEPROM or Flash components.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1350W-150 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 4096K Nonvolatile SRAM with Battery Monitor |
| DS1350WP-100 | 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1350WP-100+ | 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1350WP-100IND | 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1350WP-100IND+ | 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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