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參數(shù)資料
| 型號： | DS1345YP-70-IND |
| 英文描述： | CAT5E PATCH CORD 100 FOOT BEIGE |
| 中文描述： | 1024k非易失SRAM與電池監(jiān)視器 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 211K |
| 代理商： | DS1345YP-70-IND |
DS1345Y/AB
8 of 12
POWER-DOWN/POWER-UP TIMING
(t
A
: See Note 10)
PARAMETER
SYMBOL
V
CC
Fail Detect to
CE
and
WE
Inactive
t
PD
V
CC
slew from V
TP
to 0V
t
F
V
CC
Fail Detect to
RST
Active
t
RPD
V
CC
slew from 0V to V
TP
t
R
V
CC
Valid to
CE
and
WE
Inactive
t
PU
V
CC
Valid to End of Write Protection
t
REC
V
CC
Valid to
RST
Inactive
t
RPU
V
CC
Valid to
BW
Valid
t
BPU
MIN
TYP
MAX
1.5
UNITS
μ
s
μ
s
μ
s
μ
s
ms
ms
ms
s
NOTES
11
150
15
14
150
2
125
350
1
150
200
14
14
BATTERY WARNING TIMING
(t
A
: See Note 10)
PARAMETER
SYMBOL
Battery Test Cycle
t
BTC
Battery Test Pulse Width
t
BTPW
Battery Test to
BW
Active
t
BW
MIN
TYP
24
MAX
UNITS
hr
s
s
NOTES
1
1
(t
A
=25
°
C)
PARAMETER
SYMBOL
Expected Data Retention Time
t
DR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
WE
is high for a Read Cycle.
2.
OE
= V
IH
or V
IL
. If
OE
= V
IH
during write cycle, the output buffers remain in a high-impedance state.
3.
t
WP
is specified as the logical AND of
CE
and
WE
. t
WP
is measured from the latter of
CE
or
WE
going low to the earlier of
CE
or
WE
going high.
4.
t
DS
is measured from the earlier of
CE
or
WE
going high.
5.
These parameters are sampled with a 5 pF load and are not 100% tested.
6.
If the
CE
low transition occurs simultaneously with or latter than the
WE
low transition, the output
buffers remain in a high-impedance state during this period.
7.
If the
CE
high transition occurs prior to or simultaneously with the
WE
high transition, the output
buffers remain in high-impedance state during this period.
8.
If
WE
is low or the
WE
low transition occurs prior to or simultaneously with the
CE
low transition,
the output buffers remain in a high impedance state during this period.
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| DS1345Y-70 | 1024k Nonvolatile SRAM with Battery Monitor |
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| DS1345AB-70 | 1024k Nonvolatile SRAM with Battery Monitor |
| DS1345Y | 1024k Nonvolatile SRAM with Battery Monitor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1345YP-70IND+ | 功能描述:NVRAM 1024K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1345YP-C01 | 功能描述:NVRAM 1024K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1346 | 制造商:MAXIM 制造商全稱:Maxim Integrated Products 功能描述:Low-Current, SPI-Compatible Real-Time Clocks |
| DS1346T+ | 功能描述:實時時鐘 Low Power SPI RTC For 6Pf Crystal RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1346T+T&R | 制造商:Maxim Integrated Products 功能描述:LOW POWER SPI RTC FOR 6PF CRYSTAL - Tape and Reel |
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