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參數(shù)資料
| 型號(hào)： | DS1258W-150 |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | Static RAM |
| 英文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 150 ns, DMA40 |
| 封裝： | 0.740 INCH, DIP-40 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大小： | 200K |
| 代理商： | DS1258W-150 |
DS1258W
8 of 9
NOTES:
1) WE is high for a Read Cycle.
2) OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high impedance state.
3) tWP is specified as the logical AND of CEU or CEL and WE . tWP is measured from the latter of CEU ,
CEL
or WE going low to the earlier of CEU , CEL or WE going high.
4) tDS is measured from the earlier of CEU or CEL or WE going high.
5) These parameters are sampled with a 5pF load and are not 100% tested.
6) If the CEU or CEL low transition occurs simultaneously with or later than the WE low transition in
the output buffers remain in a high impedance state during this period.
7) If the CEU or CEL high transition occurs prior to or simultaneously with the WE high transition, the
output buffers remain in high impedance state during this period.
8) If WE is low or the WE low transition occurs prior to or simultaneously with the CEU or CEL low
transition, the output buffers remain in a high impedance state during this period.
9) Each DS1258W has a built-in switch that disconnects the lithium source until VCC is first applied by
the user. The expected tDR is defined as accumulative time in the absence of VCC starting from the
time power is first applied by the user.
10) All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0 to +70
°C. For industrial products, this range is -40°C to +85°C.
11) In a power-down condition the voltage on any pin may not exceed the voltage on VCC.
12) tWR1, tDH1 are measured from WE going high.
13) tWR2, tDH2 are measured from CEU OR CEL going high.
14) DS1258W DIP modules are recognized by Underwriters Laboratory (U.L.) under file E99151.
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Output Load: 100pF + 1TTL Gate
Cycle = 200ns
Input Pulse Levels:
All voltages are referenced to ground
0.0V to 2.7V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
Part Number
Temperature Range
Supply
Tolerance
Pin/Package
Speed Grade
DS1258W-100
0°C to +70°C
3.3V
± 0.3V
40 / 740 EMOD
100ns
DS1258W-100#
0°C to +70°C
3.3V
± 0.3V
40 / 740 EMOD
100ns
DS1258W-100IND
-40°C to +85°C
3.3V
± 0.3V
40 / 740 EMOD
100ns
DS1258W-100IND#
-40°C to +85°C
3.3V
± 0.3V
40 / 740 EMOD
100ns
DS1258W-150
0°C to +70°C
3.3V
± 0.3V
40 / 740 EMOD
150ns
DS1258W-150#
0°C to +70°C
3.3V
± 0.3V
40 / 740 EMOD
150ns
# Denotes RoHS-compliant product.
* DS9034PC or DS9034PCI (PowerCap) required. Must be ordered separately.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1258W | 128K X 16 NON-VOLATILE SRAM MODULE, 150 ns, PDIP40 |
| DS1258Y-70 | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, DIP40 |
| DS1258Y-100 | 128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DIP40 |
| DS1265AB-100 | 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36 |
| DS1265Y-70 | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA36 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1258W-150# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258W-150-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-100 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-150 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
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