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參數(shù)資料
| 型號(hào)： | DS1258W-150 |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類(lèi)： | Static RAM |
| 英文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 150 ns, DMA40 |
| 封裝： | 0.740 INCH, DIP-40 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 200K |
| 代理商： | DS1258W-150 |
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083006
FEATURES
§ 10-Year Minimum Data Retention in the
Absence of External Power
§ Data is Automatically Protected During a
Power Loss
§ Separate Upper Byte and Lower Byte Chip
Select Inputs
§ Unlimited Write Cycles
§ Low-Power CMOS
§ Read and Write Access Times as Fast as
100ns
§ Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
§ Optional Industrial Temperature Range of
-40
°C to +85°C, Designated IND
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A16
- Address Inputs
DQ0 - DQ15
- Data In/Data Out
CEU
- Chip Enable Upper Byte
CEL
- Chip Enable Lower Byte
WE
- Write Enable
OE
- Output Enable
VCC
- Power (+3.3V)
GND
- Ground
DESCRIPTION
The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV)
SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy
source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such
a condition occurs, the lithium energy source is automatically switched on and write protection is
unconditionally enabled to prevent data corruption. DIP-package DS1258W devices can be used in place
of solutions which build nonvolatile 128k x 16 memory by utilizing a variety of discrete components.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is
required for microprocessor interfacing.
DS1258W
3.3V 128k x 16 Nonvolatile
SRAM
www.maxim-ic.com
1
VCC
40
CEU
13
2
3
4
5
6
7
8
9
10
11
12
14
39
40-Pin Encapsulated Package
740mil Extended
DQ15
DQ13
DQ11
DQ10
DQ9
DQ8
GND
DQ7
DQ5
DQ6
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
A8
A6
A7
38
37
36
35
34
33
32
31
30
29
27
28
CEL
DQ14
DQ12
DQ4
DQ3
15
16
26
25
A5
A4
17
18
DQ1
DQ2
A2
A3
23
24
DQ0
OE
19
20
22
21
A1
A0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1258W | 128K X 16 NON-VOLATILE SRAM MODULE, 150 ns, PDIP40 |
| DS1258Y-70 | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, DIP40 |
| DS1258Y-100 | 128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DIP40 |
| DS1265AB-100 | 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36 |
| DS1265Y-70 | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA36 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1258W-150# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258W-150-IND | 制造商:DALLAS 制造商全稱(chēng):Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-100 | 制造商:DALLAS 制造商全稱(chēng):Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-100-IND | 制造商:DALLAS 制造商全稱(chēng):Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-150 | 制造商:DALLAS 制造商全稱(chēng):Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
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