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參數(shù)資料
| 型號： | DS1258AB-100 |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | Static RAM |
| 英文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DMA40 |
| 封裝： | 0.740 INCH, DIP-40 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 201K |
| 代理商： | DS1258AB-100 |
DS1258Y/AB
3 of 8
retain data. During power-up, when VCC rises above approximately 3.0V, the power switching circuit
connects external VCC to RAM and disconnects the lithium energy source. Normal RAM operation can
resume after VCC exceeds 4.75V for the DS1258AB and 4.5V for the DS1258Y.
FRESHNESS SEAL
The DS1258 devices are shipped from Dallas Semiconductor with the lithium energy sources
disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than VTP, the
lithium energy source is enabled for battery backup operation.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +6.0V
Operating Temperature Range
0°C to +70°C, -40
°C to +85°C for Industrial Parts
Storage Temperature Range
-40°C to +70°C, -40
°C to +85°C for Industrial Parts
Soldering Temperature
+260°C for 10 seconds
Caution: Do Not Reflow
(Wave or Hand Solder Only)
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
DS1258AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1258Y Power Supply Voltage
VCC
4.5
5.0
5.5
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
+0.8
V
DC ELECTRICAL
(VCC = 5V
± 5% for DS1258AB)
CHARACTERISTICS
(tA: See Note 10) (VCC = 5V
± 10% for DS1258Y)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Input Leakage Current
IIL
-2.0
+2.0
mA
I/O Leakage Current CEU = CEL
VIH
VCC
IIO
-1.0
+1.0
mA
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CEU , CEL =2.2V
ICCS1
0.7
1.5
mA
Standby Current CEU , CEL =VCC - 0.5V
ICCS2
150
300
mA
Operating Current
ICCO1
170
mA
Write Protection Voltage (DS1258AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage (DS1258Y)
VTP
4.25
4.37
4.5
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1258AB | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, PDIP40 |
| DS1258Y | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, PDIP40 |
| DS1258W-150 | 128K X 16 NON-VOLATILE SRAM MODULE, 150 ns, DMA40 |
| DS1258W | 128K X 16 NON-VOLATILE SRAM MODULE, 150 ns, PDIP40 |
| DS1258Y-70 | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, DIP40 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1258AB-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258AB-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258AB-70 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258AB-70# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1258AB-70IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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