參數(shù)資料
型號: DS1245AB
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: DRAM
英文描述: 1024K Nonvolatile SRAM(1024K 非易失性靜態(tài)RAM)
中文描述: 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32
文件頁數(shù): 1/12頁
文件大?。?/td> 119K
代理商: DS1245AB
DS1245Y/AB
1024K Nonvolatile SRAM
DS1245Y/AB
042398 1/12
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Replaces 128K x 8 volatile static RAM, EEPROM or
Flash memory
Unlimited write cycles
Low–power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
Full
±
10% V
CC
operating range (DS1245Y)
Optional
±
5% V
CC
operating range (DS1245AB)
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
JEDEC standard 32–pin DIP package
New PowerCap Module (PCM) package
– Directly surface–mountable module
– Replaceable snap–on PowerCap provides lith-
ium backup battery
– Standardized pinout for all nonvolatile SRAM
products
– Detachment feature on PowerCap allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
32–PIN ENCAPSULATED PACKAGE
740 MIL EXTENDED
CE
DQ4
DQ3
DQ1
DQ0
OE
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
34
33
30
29
26
23
22
20
19
NC
NC
A12
A11
A8
A5
A4
A2
A1
NC
A15
NC
GND
V
BAT
34–PIN POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
PIN DESCRIPTION
A0 – A16
– Address Inputs
DQ0 – DQ7
– Data In/Data Out
CE
– Chip Enable
WE
– Write Enable
OE
– Output Enable
V
CC
– Power (+5V)
GND
– Ground
NC
– No Connect
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
NC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
相關(guān)PDF資料
PDF描述
DS1245Y 1024K Nonvolatile SRAM(1024K 非易失性靜態(tài)RAM)
DS1245W 3.3V 1024K Nonvolatile SRAM(3.3V 1024K 非易失性靜態(tài)RAM)
DS1248Y Using the Dallas Phantom Real Time Clocks(帶幻象實時時鐘的NVSRAM)
DS1249AB 2048K Nonvolatile SRAM(2048K 非易失性靜態(tài)RAM)
DS1249Y 2048K Nonvolatile SRAM(2048K 非易失性靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1245AB-100 功能描述:NVRAM 1024K SRAM Nonvolatile RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1245AB-100+ 功能描述:NVRAM 1024K SRAM Nonvolatile RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1245AB-100-IND 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based)
DS1245AB-120 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1245AB-120+ 功能描述:NVRAM 1024K SRAM Nonvolatile RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube