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參數(shù)資料
| 型號： | DS1243Y |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | XO, clock |
| 英文描述： | 64K NV SRAM with Phantom Clock(帶幻影實時時鐘的非易失性SRAM) |
| 中文描述： | 0 TIMER(S), REAL TIME CLOCK, PDIP28 |
| 封裝： | 0.720 INCH, PLASTIC, DIP-28 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | DS1243Y |
DS1243Y
022798 11/12
NOTES:
1. WE is high for a read cycle.
2. OE = V
IH
or V
IL
. If OE = V
IH
during write cycle, the output buffers remain in a high impedance state.
3. t
WP
is specified as the logical AND of CE and WE. t
WP
is measured from the latter of CE or WE going low to the
earlier of CE or WE going high.
4. t
DH
, t
DS
are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 50 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle 1, the output
buffers remain in a high impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain
in a high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers
remain in a high impedance state during this period.
9. The expected t
DR
is defined as cumulative time in the absence of V
CC
with the clock oscillator running.
10.t
WR
is a function of the latter occurring edge of WE or CE.
11. t
DH
and t
DS
are a function of the first occurring edge of WE or CE.
12.RST (Pin1) has an internal pull–up resistor.
13.Real–Time Clock Modules can be successfully processed through conventional wave–soldering techniques as
long as temperature exposure to the lithium energy source contained within does not exceed +85
°
C. Post solder
cleaning with water washing techniques is acceptable, provided that ultrasonic vibration is not used.
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| DS1244Y | 256K NV SRAM with Phantom Clock(帶幻影實時時鐘的非易失性SRAM) |
| DS1245AB | 1024K Nonvolatile SRAM(1024K 非易失性靜態(tài)RAM) |
| DS1245Y | 1024K Nonvolatile SRAM(1024K 非易失性靜態(tài)RAM) |
| DS1245W | 3.3V 1024K Nonvolatile SRAM(3.3V 1024K 非易失性靜態(tài)RAM) |
| DS1248Y | Using the Dallas Phantom Real Time Clocks(帶幻象實時時鐘的NVSRAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1243Y+ | 制造商:Maxim Integrated Products 功能描述:Bulk |
| DS1243Y-120 | 功能描述:實時時鐘 64k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1243Y120+ | 制造商:Maxim Integrated Products 功能描述: |
| DS1243Y-120+ | 功能描述:實時時鐘 64k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1243Y-120+ | 制造商:Maxim Integrated Products 功能描述:IC |
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