參數(shù)資料
型號(hào): DN2625K6-G
廠商: SUPERTEX INC
元件分類: JFETs
英文描述: N-Channel Depletion-Mode Vertical DMOS FETs
中文描述: 1.1 A, 250 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 5 X 5 MM, 1 MM HEIGHT, GREEN, QFN-14
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 889K
代理商: DN2625K6-G
3
DN2625
Typical Performance Curves
Electrical Characteristics
(cont)
@25
O
C unless otherwise specified
Symbol
Parameter
Min
Typ
Max
Units
Conditions
I
GSS
Gate body leakage current
-
-
100
nA
V
GS
= ±20V, V
DS
= 0V
V
DS
= 250V, V
GS
= -5.0V
V
DS
= 250V, V
GS
= -5.0V,
T
A
= 125
O
C
V
GS
= 0V, V
DS
= 15V
V
= 0.9V, V
DS
= 15V with duty
cycle of 1%
V
GS
= 0V, I
D
= 1.0A
V
GS
= 0V, I
D
= 200mA
V
DS
= 10V, I
D
= 150mA
I
D(OFF)
Drain-to-source leakage current
-
-
1.0
μA
-
-
200
μA
I
DSS
Saturated drain-to-source current
1.1
-
-
A
I
DS(PULSE)
Pulsed drain-to-source current
3.1
3.3
-
A
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Static drain-to-source ON resistance
-
-
3.5
Ω
Change in R
DS(ON)
with temperature
Forward transconductance
-
-
1.1
%/
O
C
1.0
-
-
mmho
Input capacitance
-
800
1000
pF
V
GS
= -2.5V,
V
= 25V,
f = 1.0MHz
Common source output capacitance
-
70
210
Reverse transfer capacitance
-
18
70
Turn-ON delay time
-
-
10
ns
V
= 25V,
I
D
= 150mA,
R
GEN
= 3.0,
V
GS
= 0v to -10V
Rise time
-
-
20
Turn-OFF delay time
-
-
10
Fall time
-
-
20
Diode forward voltage drop
-
-
1.8
V
V
GS
= -2.5V, I
SD
= 150mA
Output Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
50
100
150
200
250
V
DS
(V)
)
A
(
D
V
GS
= 2.0V
V
GS
= 1.5V
V
GS
= 1.0V
V
GS
= 0.5V
V
GS
= 0V
V
GS
= -0.5V
V
GS
= -1.0V
V
GS
= -1.5V
V
GS
= -2.0V
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