參數(shù)資料
型號: DN2625K6-G
廠商: SUPERTEX INC
元件分類: JFETs
英文描述: N-Channel Depletion-Mode Vertical DMOS FETs
中文描述: 1.1 A, 250 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 5 X 5 MM, 1 MM HEIGHT, GREEN, QFN-14
文件頁數(shù): 2/7頁
文件大?。?/td> 889K
代理商: DN2625K6-G
2
DN2625
Electrical Characteristics
@25
O
C unless otherwise specified
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSX
BV
DGX
V
GS(OFF)
ΔV
GS(OFF)
Drain-to-source breakdown voltage
250
-
-
V
V
GS
= -2.5V, I
D
= 50μA
V
GS
= -2.5V, I
D
= 50μA
V
DS
= 15V, I
D
= 100μA
V
DS
= 15V, I
D
= 100μA
Drain-to-gate breakdown voltage
250
-
-
V
Gate-to-source OFF voltage
-1.5
-
-2.1
V
Change in V
GS(OFF)
with temperature
-
-
4.5
mV/
O
C
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
250V
250V
±20V
-55
O
C to +150
O
C
300
O
C
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Ordering Information
Device
Package Options
BV
DSX
/
BV
DGX
(V)
V
GS(OFF)
(max V)
I
(V
GS
=0.9V)
(min A)
TO-252
(D-PAK)
14-Lead QFN
5x5mm body,
1.0mm height (max), 1.27mm pitch
DN2625
DN2625K4-G
DN2625K6-G
250
-2.1
3.3
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
Drain
Gate
Source
Product Marking
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
TO-252 D-PAK
YYWW
DN2625
LLLLLLL
TO-252 D-PAK
(top view)
GATE
SOURCE
SOURCE
SOURCE
GATE
SOURCE
SOURCE
SOURCE
DRAIN DRAIN DRAIN
14 13
12
DRAIN DRAIN DRAIN
14-Lead QFN
(top view)
1
1
2
3
4
11
10
9
8
5 6 7
14-Lead QFN
DN2625
LLLLLL
YYWW
AAACCC
L = Lot Number
YY = Year Sealed
WW = Week Sealed
A = Assembler ID
C = Country of Origin
= “Green” Packaging
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