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參數(shù)資料
| 型號： | DMN601DMK-7 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 305 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 130K |
| 代理商： | DMN601DMK-7 |
Notes: 5. Short duration test pulse used to minimize self-heating effect.
DS30657 Rev. 2 - 2
2 of 4
DMN601DMK
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
60
1
±
10
V
μ
A
μ
A
V
GS
= 0V, I
D
= 10
μ
A
V
DS
= 60V, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
GS(th)
1.0
1.6
2.5
V
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 200mA
V
GS
= 4V, I
D
= 200mA
V
DS
=10V, I
D
= 200mA
V
GS
= 0V, I
S
= 115mA
Static Drain-Source On-Resistance
R
DS (ON)
2.4
4.0
1.4
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
|Y
fs
|
V
SD
100
0.5
ms
V
C
iss
C
oss
C
rss
50
25
5.0
pF
pF
pF
V
= 25V, V
GS
= 0V
f = 1.0MHz
0.1
I
,
DRAIN CURRENT (A)
D
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
1
10
0.001
0.01
0.1
1
T = 150
°
C
T = 125
°
C
T = 85
°
C
T = -55
°
C
T = 25
°
C
T = 0
°
C
T = -25
°
C
V
Pulsed
= 10V
GS
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
0
0.5
1
1.5
2
-50
-25
0
25
50
75
100
125
150
V
G
G
V
= 10V
DS
I = 1mA
Pulsed
V
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
0.01
0.10
1.00
1
1.5
2
2.5
3
3.5
4
4.5
5
I
D
T = 125
°
C
T = 25
°
C
T = -25
°
C
T = 75
°
C
V
Pulsed
= 10V
DS
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
,
DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
I
D
1.2
1.4
3V
4V
6V
8V
10V
V
= 10V
GS
8V
6V
5V
4V
3V
5V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DMN601DWK | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601DWK_07 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601DWK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN601K | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601K_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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