4
FN3116.9
March 13, 2006
Absolute Maximum Ratings
Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44.0V
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Digital Inputs, V
S
, V
D
(Note 1). . . . . . (V-) -2V to (V+) +2V or 20mA,
Whichever Occurs First
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . . . .100mA
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Thermal Resistance (Typical, Note1)
PDIP Package*. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
(PLCC and SOIC - Lead Tips Only)
*Pb-free PDIPs can be used for through hole wave solder processing
only. They are not intended for use in Reflow solder processing
applications.
θ
JA
(
o
C/W)
60
75
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. Signals on S
X
, D
X
, EN or A
X
exceeding V+ or V- are clamped by internal diodes. Limit diode current to maximum current ratings.
Electrical Specifications
Test Conditions: V+ = +15V, V- = -15V, V
AL
= 0.8V, V
AH
= 2.4V Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP (
o
C)
(NOTE 3)
MIN
(NOTE 4)
TYP
(NOTE 3)
MAX
UNITS
DYNAMIC CHARACTERISTICS
Transition Time, t
TRANS
(See Figure 1)
25
-
200
300
ns
Full
-
-
400
ns
Break-Before-Make Interval, t
OPEN
(See Figure 3)
25
25
50
-
ns
Full
10
-
-
ns
Enable Turn-ON Time, t
ON(EN)
(See Figure 2)
25
-
150
200
ns
Full
-
-
400
ns
Enable Turn-OFF Time, t
OFF(EN)
25
-
70
150
ns
Full
-
-
300
ns
Charge Injection, Q
C
L
= 1nF, V
S
= 0V, R
S
= 0
V
EN
= 0V, R
L
= 1k
,
f = 100kHz (Note 7)
25
-
40
-
pC
OFF Isolation, OIRR
25
-
-69
-
dB
Logic Input Capacitance, C
IN
Source OFF Capacitance, C
S(OFF)
f = 1MHz
25
-
7
-
pF
V
EN
= 0V, V
S
= 0V,
f = 1MHz
25
-
8
-
pF
Drain OFF Capacitance, C
D(OFF)
DG406
V
EN
= 0V, V
D
= 0V,
f = 1MHz
25
-
160
-
pF
DG407
25
-
80
-
pF
Drain ON Capacitance, C
D(ON)
DG406
V
EN
= 5V, V
D
= 0V,
f = 1MHz
25
-
180
-
pF
DG407
25
-
90
-
pF
DIGITAL INPUT CHARACTERISTICS
Logic High Input Voltage, V
INH
Logic Low Input Voltage, V
INL
Logic High Input Current, I
AH
Logic Low Input Current, I
AL
ANALOG SWITCH CHARACTERISTICS
Full
2.4
-
-
V
Full
-
-
0.8
V
V
A
= 2.4V, 15V
V
EN
= 0V, 2.4V, V
A
= 0V
Full
-1
-
1
μ
A
Full
-1
-
1
μ
A
Drain-Source ON Resistance,
r
DS(ON)
V
D
=
±
10V, I
S
= +10mA (Note 5)
25
-
50
100
Full
-
-
125
r
DS(ON)
Matching Between Channels,
r
DS(ON)
V
D
= 10V, -10V (Note 6)
25
-
5
-
%
DG406, DG407