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參數(shù)資料
| 型號(hào)： | DF2S5.6S |
| 元件分類(lèi)： | 齊納二極管 |
| 英文描述： | 5.6 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | ULTRA SMALL, 1-1K1A, SESC, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | DF2S5.6S |
DF2S5.6S
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S5.6S
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
2terminal ultra small package suitable for mounting on small space.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
150*
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
VZ
IZ = 5 mA
5.3
5.6
6.0
V
Dynamic impedance
ZZ
IZ = 5 mA
―
30
Reverse current
IR
VR = 3.5 V
―
1
μA
Total capacitance
CT
VR = 0 V, f = 1 MHz
―
40
―
pF
Guaranteed Level of ESD Immunity
Marking
Equivalent Circuit (Top View)
6 .
Criterion: No damage to device elements
Unit: mm
CA
THODE
M
A
RK
JEDEC
JEITA
TOSHIBA
1-1K1A
Weight: 0.0001 g (typ.)
Test Condition
ESD Immunity Level
IEC61000-4-2
(contact discharge)
±30 kV
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相關(guān)代理商/技術(shù)參數(shù) |
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| DF2S6.2FS | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Product for Use Only as Protection against Electrostatic Discharge (ESD). |
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| DF2S6.8CT(TPL3) | 功能描述:ESD 抑制器 ZENER DIODE RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類(lèi)型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| DF2S6.8FS | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Product for Use Only as Protection against Electrostatic Discharge (ESD). |
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