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參數(shù)資料
| 型號： | DF6A6.8FU |
| 元件分類： | 齊納二極管 |
| 英文描述： | 6.8 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | 1-2T1A, US6, 5 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 191K |
| 代理商： | DF6A6.8FU |
DF6A6.8FU
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF6A6.8FU
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The incorporation of four devices in an ultra-compact package reduces
the number of parts and lowers assembly cost.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
VZ
IZ = 5mA
6.4
6.8
7.2
V
Dynamic impedance
ZZ
IZ = 5mA
―
25
Reverse current
IR
VR = 5V
―
0.5
μA
Terminal capacitance
(between Cathode and Anode)
CT
VR = 0, f = 1MHz
―
45
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 30 kV
Criterion: No damage to device elements
Unit: mm
1.CATHODE1
2.CATHODE2
3.ANODE2
4.CATHODE3
5.CATHODE4
6.ANODE1
JEDEC
JEITA
TOSHIBA
1-2T1A
Weight: 6.8 mg (typ.)
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