參數(shù)資料
型號: DD800S17K6CB2V
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 2/5頁
文件大小: 128K
代理商: DD800S17K6CB2V
Technische Information / Technical Information
DD 800 S 17 K6C B2
IGBT-Module
IGBT-Modules
vorlufige daten
preliminary data
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode / per diode, DC
R
thJC
0,034
K/W
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
Paste
= 1 W/m*K /
grease
= 1 W/m*K
R
thCK
0,008
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
150
°C
Betriebstemperatur
operation temperature
T
vjop
-40
125
°C
Lagertemperatur
storage temperature
T
stg
-40
125
°C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
AlN
Kriechstrecke
creepage distance
15
mm
Luftstrecke
clearance
10
mm
CTI
comperative tracking index
min.
275
Anzugsdrehmoment f. mech. Befestigung
mounting torque
M1
5
Nm
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
G
1050
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
terminals M8
M2
8 - 10
Nm
2(5)
DD800S17K6CB2_V.xls
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DD800S33K2 制造商:n/a 功能描述:IGBT Module
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