參數(shù)資料
型號: DD800S33K2
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 1/5頁
文件大?。?/td> 128K
代理商: DD800S33K2
Technische Information / Technical Information
DD 800 S 17 K6C B2
IGBT-Module
IGBT-Modules
vorlufige daten
preliminary data
Hchstzulssige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
T
vj
= 25°C
V
CES
1700
V
Dauergleichstrom
DC forward current
I
F
800
A
Periodischer Spitzenstrom
repetitive peak forward current
t
p
= 1 ms
I
FRM
1600
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
170
kA
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
4
kV
Charakteristische Werte / Characteristic values
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 800A, V
GE
= 0V, T
vj
= 25°C
V
F
2,1
2,5
V
I
F
= 800A, V
GE
= 0V, T
vj
= 125°C
2,1
2,5
V
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
I
F
= 800A, - di
F
/dt = 6300A/μsec
V
R
= 900V, T
vj
= 25°C
I
RM
710
A
V
R
= 900V, T
vj
= 125°C
860
A
Sperrverzgerungsladung
recovered charge
I
F
= 800A, - di
F
/dt = 6300A/μsec
V
R
= 900V, T
vj
= 25°C
Q
r
135
μAs
V
R
= 900V, T
vj
= 125°C
265
μAs
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 800A, - di
F
/dt = 6300A/μsec
V
R
= 900V, T
vj
= 25°C
E
rec
75
mWs
V
R
= 900V, T
vj
= 125°C
155
mWs
Modulinduktivitt
stray inductance module
pro Diode / per Diode
L
sAC
20
nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm
R
CC′+EE′
0,16
m
prepared by: A. Wiesenthal
date of publication: 06.11.2001
approved by: Christoph Lübke; 2001-11-09
revision: 1 (preliminary)
V
R
= 1700V, T
vj
= 25°C
I
R
5
mA
1(5)
DD800S17K6CB2_V.xls
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