參數(shù)資料
型號(hào): DD285N
英文描述: SCR / Diode Modules
中文描述: SCR /二極管模塊
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 222K
代理商: DD285N
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD285N
MA2-BE / 87-08-20, K.Spec
A20/87
1/9
Seite/page
Stospitzensperrspannung
non-repetitive peak reverse voltage
DD285N
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
T
vj
= -40°C... T
vj max
V
RRM
400
600
800
V
V
T
vj
= +25°C... T
vj max
V
RSM
500
700
900
V
V
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
I
FRMSM
450 A
Dauergrenzstrom
average on-state current
T
C
= 100°C
I
FAVM
285 A
Stostrom-Grenzwert
surge current
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FSM
9.500
8.300
A
A
Grenzlastintegral
I2t-value
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I2t
451.000
344.000
A2s
A2s
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
T
vj
= T
vj max
, i
F
= 800 A
v
F
max.
1,15 V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,75 V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
0,4 m
Sperrstrom
reverse current
T
vj
= T
vj max
, v
R
= V
RRM
i
R
max.
20 mA
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
V
ISOL
3,6
3,0
kV
kV
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Modul / per Module,
Θ
= 180° sin
pro Zweig / per arm,
Θ
= 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
R
thJC
max.
max.
max.
max.
0,085
0,170
0,082
0,164
°C/W
°C/W
°C/W
°C/W
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
pro Zweig / per arm
R
thCH
max.
max.
0,02
0,04
°C/W
°C/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj max
150 °C
Betriebstemperatur
operating temperature
T
c op
- 40...+150 °C
Lagertemperatur
storage temperature
T
stg
- 40...+150 °C
prepared by: C. Drilling
date of publication:
30.04.03
approved by: M. Leifeld
revision:
1
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