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參數(shù)資料
| 型號： | DD28F032SA-080 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| 中文描述： | 4M X 8 FLASH 12V PROM, 80 ns, PDSO56 |
| 封裝： | 14 X 20 MM, 1.20 MM HEIGHT, TSOP-56 |
| 文件頁數(shù)： | 1/49頁 |
| 文件大?。?/td> | 1402K |
| 代理商： | DD28F032SA-080 |
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E
December 1996
Order Number: 290490-005
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User-Selectable 3.3V or 5V V
CC
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User-Configurable x8 or x16 Operation
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70 ns Maximum Access Time
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28.6 MB/sec Burst Write Transfer Rate
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1 Million Typical Erase Cycles per Block
n
56-Lead, 1.2 x 14 x 20 mm Advanced
Dual Die TSOP Package Technology
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64 Independently Lockable Blocks
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Revolutionary Architecture
100% Backwards-Compatible with
Intel 28F016SA
Pipelined Command Execution
Program during Erase
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2 mA Typical I
CC
in Static Mode
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2 μA Typical Deep Power-Down
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State-of-the-Art 0.6 μm ETOX IV Flash
Technology
Intel’s DD28F032SA 32-Mbit FlashFile memory is a revolutionary architecture which enables the design of
truly mobile, high performance, personal computing and communication products. With innovative
capabilities, low power operation and very high read/program performance, the DD28F032SA is also the ideal
choice for designing embedded mass storage flash memory systems.
The DD28F032SA is the result of highly-advanced packaging innovation which encapsulates two 28F016SA
die in a single Dual Die Thin Small Outline Package (DDTSOP).
The DD28F032SA is the highest density, highest performance nonvolatile read/program solution for solid-
state storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F016SA
16-Mbit FlashFile memory), very high-cycling, low-power 3.3V operation, very fast program and read
performance and selective block locking provide a highly flexible memory component suitable for high-density
memory cards, Resident Flash Arrays and PCMCIA-ATA Flash Drives. The DD28F032SA’s dual read voltage
enables the design of memory cards which can be read/written in 3.3V and 5.0V systems interchangeably. Its
x8/x16 architecture allows the optimization of memory to processor interface. The flexible block locking option
enables bundling of executable application software in a Resident Flash Array or memory card. The
DD28F032SA will be manufactured on Intel’s 0.6 μm ETOX IV technology.
DD28F032SA
32-MBIT (2 MBIT X 16, 4 MBIT X 8)
FlashFile MEMORY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DD28F032SA-100 | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY |
| DD28F032SA-150 | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA100 | x8/x16 Flash EEPROM |
| DD28F032SA70 | x8/x16 Flash EEPROM |
| DD28F032SA | 32-Mbit (2 Mbit x 16,4 Mbit x 8) FlashFile Memory(32-M位 (2 M位 x 16,4 M位 x 8) FlashFile存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DD28F032SA100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| DD28F032SA-100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| DD28F032SA-70 | 制造商:Intel 功能描述:4M X 8 FLASH 3V PROM, 70 ns, 56 Pin Plastic SMT |
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