參數(shù)資料
型號: DCR820SG60
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 晶閘管
英文描述: Phase Control Thyristor
中文描述: 608 A, 6000 V, SCR
封裝: G, 4 PIN
文件頁數(shù): 7/10頁
文件大小: 187K
代理商: DCR820SG60
7/10
DCR820SG
www.dynexsemi.com
Fig.8 Gate characteristics
Fig.9 Gate characteristics
Gate trigger current, I
GT
- (A)
G
G
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
Preferred gate drive area
Upper limit
Lower limit
Pulse Width
μ
s
100
200
500
1000
10000
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Frequency Hz
Table gives pulse power P
GM
in Watts
Gate trigger current, I
GT
- (A)
Upper Limit
Lower Limit
5W
10W
20W
50W
100W
G
G
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
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