參數(shù)資料
型號(hào)： DCR820SG60
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 晶閘管
英文描述： Phase Control Thyristor
中文描述： 608 A, 6000 V, SCR
封裝： G, 4 PIN
文件頁(yè)數(shù)： 4/10頁(yè)
文件大小： 187K
代理商： DCR820SG60
4/10
www.dynexsemi.com
DCR820SG
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See Fig.8/9 Gate characteristics curves and table
P
G(AV)
Mean gate power
-
3.0
V
-
300
mA
-
0.25
V
-
30
V
-
0.25
V
-
5
V
-
10
A
-
100
W
-
5
W
Typ.
Max.
Units
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
to 1000A,
Gate source 10V, 5
t
r
≤
0.5
μ
s. T
j
= 125
o
C.
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C.
Min.
Max.
Units
-
50
mA
-
1000
V/
μ
s
Repetitive 50Hz
-
50
A/
μ
s
Non-repetitive
-
100
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
I
L
Latching current
T
j
= 25
o
C, V
D
= 20V.
I
H
Holding current
T
j
= 25
o
C, V
D
= 5V, I
T
= 5A, I
TM
= 500A
1.6
-
V
-
3.5
m
-
3.3
μ
s
V
= 67% V
DRM
, Gate source 20V, 10
Rise time 0.5
μ
s, T
j
= 25
o
C
-
1
A
30
120
mA
I
T
= 500A, t
= 1ms, T
= 125C,
V
RM
= 100V, dI
RR
/dt = 10A/
μ
s,
dV
DR
/dt = 25V/
μ
s to 3000V
μ
s
1200
500
Turn-off time
t
q
Q
S
Stored charge - triangular approximation
through I
RR
and 25% I
RR
I
T
= 320A, -dI
T
/dt = 6A/
μ
s
600
1500
μ
C
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