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參數(shù)資料
| 型號(hào)： | DCR504ST |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 相位控制晶閘管 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 107K |
| 代理商： | DCR504ST |
6/8
www.dynexsemi.com
DCR504ST
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
125C)
10
1
0.1
0.01
0.001
Time - (s)
1.0
0.1
0.01
0.001
T
C
Double side cooled
Anode side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.063
0.073
0.093
0.112
Anode side
0.11
0.12
0.14
0.16
20
15
10
5
0
P
1
10
1
2 3 45
50
ms
Cycles at 50Hz
Duration
50
100
I
2
t
2
s
3
)
I
2
t
I
2
t =
2
x t
2
150
10
20 30
Fig.4 Recovered charge
Fig.5 Gate characteristics
10
I
FGM
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
G
G
100W
50W
20W
10W
5W
Region of certain
triggering
Upper limit 95%
Lower limit 5%
T
j
C
T
j
C
T
j
C
V
GD
0.1
1.0
10
100
Rate of decay of on-state current, dI
T
/dt - (A/μs)
10000
1000
100
R
R
Conditions:
T
j
= 125
C
V
R
= 50V
t
p
= 1ms
I
T
= 300A
0.25xI
RM
I
RM
Q
R
t
p
I
T
dI
T
/dt
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PDF描述 |
|---|---|
| DCR803SG | Phase Control Thyristor |
| DCR803SG14 | Phase Control Thyristor |
| DCR803SG15 | Phase Control Thyristor |
| DCR803SG16 | Phase Control Thyristor |
| DCR803SG17 | Phase Control Thyristor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DCR504ST0101 | 制造商:n/a 功能描述:Power SCR |
| DCR504ST0202 | 制造商:n/a 功能描述:Power SCR |
| DCR504ST0303 | 制造商:n/a 功能描述:Power SCR |
| DCR504ST0404 | 制造商:n/a 功能描述:Power SCR |
| DCR504ST0505 | 制造商:n/a 功能描述:Power SCR |
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