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www.dynexsemi.com
DCR504ST
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
to 700A
Gate source 10V, 5
t
r
≤
0.5
μ
s, T
j
= 125
o
C
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C. Gate open circuit.
Typ.
Max.
Units
-
30
mA
-
1000
V/
μ
s
Repetitive 50Hz
-
350
A/
μ
s
Non-repetitive
-
700
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
I
L
Latching current
T
j
= 25
o
C, V
D
= 10V
I
H
Holding current
T
j
= 25
o
C, R
g-k
=
∞
1.05
-
V
-
0.8
m
-
0.8
μ
s
V
D
= 67% V
DRM
, Gate source 20V, 10
dI
G
/dt = 20A/
s, T
j
= 25
o
C
-
200
mA
-
30
mA
I
T
= 300A, t
p
= 1ms, T
= 125C,
V
R
= 50V, dI
RR
/dt = 20A/
μ
s,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/
μ
s linear.
μ
s
-
300
Turn-off time
t
q
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At 67% V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See table, gate characteristics curve
P
G(AV)
Mean gate power
3.0
V
150
mA
0.25
V
30
V
0.25
V
5
V
10
A
100
W
5
W
Max.
Units