參數(shù)資料
型號(hào): DCR1021SF60
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 晶閘管
英文描述: Phase Control Thyristor Target Information
中文描述: 1320 A, 6000 V, SCR
封裝: F, 4 PIN
文件頁數(shù): 5/11頁
文件大小: 211K
代理商: DCR1021SF60
DCR1021SF
5/11
www.dynexsemi.com
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 7
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3
300
0.25
30
0.25
5
10
150
5
Units
V
mA
V
V
V
V
A
W
W
Fig.2 Maximum (limit) on-state characteristics
0
500
1000
1500
2000
2500
3000
1
1.5
2
2.5
3
3.5
4
Instantaneous on-state voltage, V
T
- (V)
I
T
T
j
= 125
C
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