參數(shù)資料
型號: DCR1021SF60
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 晶閘管
英文描述: Phase Control Thyristor Target Information
中文描述: 1320 A, 6000 V, SCR
封裝: F, 4 PIN
文件頁數(shù): 4/11頁
文件大小: 211K
代理商: DCR1021SF60
DCR1021SF
4/11
www.dynexsemi.com
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
,
Repetitive 50Hz
Gate source 30V, 15
,
Non-repetitive
t
r
0.5
μ
s, T
j
= 125C
At T
vj
= 125C
At T
vj
= 125C
V
D
= 67% V
DRM
, gate source 30V, 15
t
r
= 0.5
μ
s, Tj = 25C
I
T
= 1000A, t
p
= 1ms, T
j
=125C,
V
R
= 100V, dI
RR
/dt = 10A/
μ
s,
V
DR
= 67% V
DRM
,
dV
DR
/dt = 20V/
μ
s linear
T
j
= 25C, V
D
= 10V
T
j
= 25C, V
G–K
=
Symbol
I
RRM
/I
RRM
dV/dt
dI/dt
V
T(TO)
r
T
t
gd
t
q
I
L
I
H
SURGE RATINGS
Units
mA
V/
μ
s
A/
μ
s
A/
μ
s
V
m
μ
s
μ
s
mA
mA
Max.
150
1000
30
100
1.2
0.98
1.5
-
600
200
Min.
-
-
-
-
-
-
0.5
1500
-
-
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