參數(shù)資料
型號(hào)： DBFP15R12KT321
英文描述： IGBT Module
中文描述： IGBT模塊
文件頁數(shù)： 4/10頁
文件大?。?/td> 316K
代理商： DBFP15R12KT321
4
Technische Information / technical information
FP15R12KT3
IGBT-Module
IGBT-modules
prepared by: Andreas Schulz
approved by: Robert Severin
date of publication: 2003-12-2
revision: 2.1
Vorlufige Daten
preliminary data
Diode-Brems-Chopper / Diode-brake-chopper
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TY = 80°C
V￠
1200
V
Dauergleichstrom
DC forward current
I
10
A
Periodischer Spitzenstrom
repetitive peak forw. current
t = 1 ms
I￠
20
A
Grenzlastintegral
I2t - value
V = 0 V, t = 10 ms, TY = 125°C
I2t
20,0
A2s
Charakteristische Werte / characteristic values
min.
typ.
1,80
1,85
max.
2,25
Durchlaspannung
forward voltage
I = 10 A, V = 0 V, TY = 25°C
I = 10 A, V = 0 V, TY = 125°C
V
V
V
Rückstromspitze
peak reverse recovery current
I = 10 A, -di/dt = 400 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
I￠
14,0
15,0
A
A
Sperrverzgerungsladung
recovered charge
I = 10 A, -di/dt = 400 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
Q
1,00
1,80
μC
μC
Abschaltenergie pro Puls
reverse recovery energy
I = 10 A, -di/dt = 400 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
Etê
0,26
0,56
mJ
mJ
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
2,30
K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
min.
typ.
max.
Nennwiderstand
rated resistance
T = 25°C
Rè
5,00
k
Abweichung von R
deviation of R
T = 100°C, R = 493
R/R
-5
5
%
Verlustleistung
power dissipation
T = 25°C
Pè
20,0
mW
B-Wert
B-value
Rè = Rè exp [Bè(1/Tè - 1/(298,15 K))]
Bè
3375
K
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