參數(shù)資料
型號： DBFF800R17KE320
英文描述： IGBT Module
中文描述： IGBT模塊
文件頁數(shù)： 2/8頁
文件大?。?/td> 124K
代理商： DBFF800R17KE320
vorlufige Daten
preliminary data
Technische Information / technical information
FF800R12KE3
IGBT-Module
IGBT-Modules
min.
typ.
max.
-
0,60
-
μs
-
0,66
-
μs
-
0,23
-
μs
-
0,22
-
μs
-
0,82
-
μs
-
0,96
-
μs
-
0,15
-
μs
-
0,18
-
μs
-
2,2
2,8
V
-
2
-
V
-
260
-
A
-
400
-
A
-
37
-
μC
-
90
-
μC
-
9
-
mJ
-
24
-
mJ
-
3200
-
A
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
-
V
GE
=±15V, R
Gon
=3,3 , T
vj
= 125°C
Fallzeit (induktive Last)
fall time (inductive load)
I
SC
E
off
I
C
= 800A, V
CC
= 600V, L = 90nH
V
GE
=±15V, R
Goff
=0,39 , T
vj
= 125°C
I
C
= 800A, V
CC
= 600V
V
GE
=±15V, R
Goff
=0,39 , T
vj
=25°C
V
GE
=±15V, R
Goff
=0,39 ,T
vj
= 125°C
E
on
I
C
= 800A, V
CC
= 600V, L = 90nH
-
nH
stray inductance module
Modulindiktivitt
L
CE
-
20
SC data
V
CC
= 900V, V
CEmax
= V
CES
- L
CE
· di/dt
Kurzschlussverhalten
t
P
10μs, V
GE
15V, T
Vj
125°C
Einschaltverlustenergie pro Puls
0,18
Q
r
Ausschaltenergie pro Puls
reverse recovery energy
E
rec
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
I
F
=I
C,nom
, -di
F
/dt= 3600A/μs
Sperrverzgerungsladung
recoverred charge
I
F
=I
C,nom
, -di
F
/dt= 3600A/μs
I
C
= 800A, V
CC
= 600V
t
d,off
V
GE
=±15V, R
Goff
=0,39 , T
vj
=25°C
V
GE
=±15V, R
Goff
=0,39 ,T
vj
= 125°C
m
Charakteristische Werte / characteristic values
-
-
t
f
V
GE
=±15V, R
Gon
=3,3
T
vj
=25°C
V
GE
=±15V, R
Gon
=3,3 , T
vj
= 125°C
-
t
d,on
I
C
= 800A, V
CC
= 600V
t
r
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
V
F
forward voltage
Rückstromspitze
peak reverse recovery current
I
RM
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
R
CC′/EE′
T
c
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
I
F
=I
C,nom
, -di
F
/dt= 3600A/μs
Durchlassspannung
Charakteristische Werte / characteristic values
I
F
= I
C, nom
, V
GE
= 0V, T
vj
= 25°C
I
F
= I
C, nom
, V
GE
= 0V, T
vj
= 125°C
Diode Wechselrichter / diode inverter
Transistor Wechselrichter / transistor inverter
Anstiegszeit (induktive Last)
rise time (inductive load)
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
V
GE
=±15V, R
Gon
=3,3 , T
vj
= 125°C
I
C
= 800A, V
CC
= 600V
V
GE
=±15V, R
Gon
=3,3
T
vj
=25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
160
125
-
mJ
-
mJ
2 (8)
DB_FF800R12KE3_2.0.xls
2002-07-30
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