I
C, nom
I
C
200
295
A
A
min.
typ.
max.
-
1,7
2,15
V
-
2,0
-
V
mA
μC
gate charge
Gateladung
V
GE
= -15V...+15V
Q
G
-
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
V
GES
revision: 3.0
date of publication: 2002-10-02
Kollektor Emitter Reststrom
collector emitter cutt off current
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
Kollektor Emitter Sttigungsspannung
collector emitter saturation voltage
I
C
= 200A, V
GE
= 15V, T
vj
= 25°C
I
C
= 200A, V
GE
= 15V, T
vj
= 125°C
V
A
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
V
ISOL
I
CRM
P
tot
1040
2,5
kV
repetitive peak forward current
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
Technische Information / technical information
FF200R12KE3
IGBT-Module
IGBT-Modules
V
CEsat
Charakteristische Werte / characteristic values
approved: SM TM; Wilhelm Rusche
gate threshold voltage
V
GE
= 0V, T
vj
= 25°C, V
CE
= 600V
prepared by: MOD-D2; Mark Münzer
Periodischer Spitzenstrom
Dauergleichstrom
DC forward current
I
F
I2t value
Transistor Wechselrichter / transistor inverter
1200
V
Elektrische Eigenschaften / electrical properties
V
CES
400
-
T
c
= 25°C
DC collector current
reverse transfer capacitance
Rückwirkungskapazitt
Gate Schwellenspannung
I
C
= 8mA, V
CE
= V
GE
, T
vj
= 25°C
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
collector emitter voltage
T
c
= 80°C
Kollektor Dauergleichstrom
T
vj
= 25°C
W
V
gate emitter peak voltage
200
T
c
= 25°C; Transistor
repetitive peak collector current
t
p
= 1ms, T
c
= 80°C
Periodischer Kollektor Spitzenstrom
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
A
+/- 20
7,8
k A2s
t
p
= 1ms
I
FRM
400
A
Grenzlastintegral
nF
nF
14
-
0,5
6,5
-
-
-
5
-
5,0
5,8
1,9
-
nA
gate emitter leakage current
Gate Emitter Reststrom
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
400
-
I
CES
I2t
C
res
V
GE(th)
C
ies
1 (8)
DB_FF200R12KE3_3.0
2002-10-02