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參數(shù)資料
| 型號： | DBBSM100GAL120DLCK30 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | DBBSM100GAL120DLCK30 |
Technische Information / Technical Information
BSM100GAL120DLC K
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 100A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 25°C
t
d,on
-
0,06
-
μs
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 125°C
-
0,06
-
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 100A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 25°C
t
r
-
0,05
-
μs
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 125°C
-
0,05
-
μs
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 100A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 25°C
t
d,off
-
0,35
-
μs
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 125°C
-
0,40
-
μs
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 100A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 25°C
t
f
-
0,06
-
μs
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 125°C
-
0,08
-
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I
C
= 100A, V
CE
= 600V, V
GE
= ±15V
R
G
= 5,6
, T
vj
= 125°C, L
σ
= 60nH
E
on
-
10
-
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I
C
= 100A, V
CE
= 600V, V
GE
= ±15V
R
G
= 5,6
, T
vj
= 125°C, L
σ
= 60nH
E
off
-
12
-
mJ
Kurzschluverhalten
SC Data
t
P
≤
10μs, V
GE
≤
15V, R
G
= 5,6
T
Vj
≤
125°C, V
CC
=900V, V
CEmax
=V
CES
-L
σ
CE
·di/dt
I
SC
-
650
-
A
Modulinduktivitt
stray inductance module
L
σ
CE
-
40
-
nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
T
C
=25°C
R
CC‘+EE‘
-
0,85
-
m
Charakteristische Werte / Characteristic values
Inversdiode / free-wheel diode
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 100A, V
GE
= 0V, T
vj
= 25°C
V
F
-
1,8
2,3
V
I
F
= 100A, V
GE
= 0V, T
vj
= 125°C
-
1,7
2,2
V
Rückstromspitze
peak reverse recovery current
I
F
= 100A, - di
F
/dt = 2700A/μs
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
I
RM
-
125
-
A
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
-
155
-
A
Sperrverzgerungsladung
recovered charge
I
F
= 100A, - di
F
/dt = 2700A/μs
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
Q
r
-
12
-
μC
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
-
22
-
μC
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 100A, - di
F
/dt = 2700A/μs
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
E
rec
-
4
-
mJ
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
-
9
-
mJ
Chopperdiode / chopper diode
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 150A, V
GE
= 0V, T
vj
= 25°C
V
F
-
1,8
2,3
V
I
F
= 150A, V
GE
= 0V, T
vj
= 125°C
-
1,7
2,2
V
Rückstromspitze
peak reverse recovery current
I
F
= 150A, - di
F
/dt = 3100A/μs
V
R
= 600V, VGE = -15V, T
vj
= 25°C
I
RM
-
180
-
A
V
R
= 600V, VGE = -15V, T
vj
= 125°C
-
220
-
A
Sperrverzgerungsladung
recovered charge
I
F
= 150A, - di
F
/dt = 3100A/μs
V
R
= 600V, VGE = -15V, T
vj
= 25°C
Q
r
-
17
-
μC
V
R
= 600V, VGE = -15V, T
vj
= 125°C
-
32
-
μC
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 150A, - di
F
/dt = 3100A/μs
V
R
= 600V, VGE = -15V, T
vj
= 25°C
E
rec
-
4
-
mJ
V
R
= 600V, VGE = -15V, T
vj
= 125°C
-
10
-
mJ
2(8)
DB_BSM100GAL120DLC k_3.0
2003-01-23
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