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參數(shù)資料
| 型號： | DBBSM100GAL120DLCK30 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | DBBSM100GAL120DLCK30 |
Technische Information / Technical Information
BSM100GAL120DLC K
IGBT-Module
IGBT-Modules
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
= 25° C
V
CES
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80 °C
I
C,nom.
100
A
T
C
= 25 °C
I
C
205
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80°C
I
CRM
200
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25°C, Transistor
P
tot
830
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
100
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
200
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
1,71
k A
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I
C
= 100A, V
GE
= 15V, T
vj
= 25°C
V
CE sat
-
2,1
2,6
V
I
C
= 100A, V
GE
= 15V, T
vj
= 125°C
-
2,4
2,9
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 4mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
4,5
5,5
6,5
V
Gateladung
gate charge
V
GE
= -15V...+15V
Q
G
-
1,1
-
μC
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
6,5
-
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
-
0,5
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: MOD-D2; Mark Münzer
date of publication: 2003-01-23
approved by: SM TM; Wilhelm Rusche
revision: 3.0
5
mA
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
-
1(8)
DB_BSM100GAL120DLC k_3.0
2003-01-23
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DBBSM100GB120DLC31 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
| DBBSM100GB120DLCK31 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
| DBBSM150GB120DLC31 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
| DBBSM150GT120DLCV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
| DBBSM200GA120DLC31 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
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